
Icp Cvd System For Graphene And Boron Carbide Layers (Pecvd Lab 200)
Price:
Get Latest Price
In Stock
Product Overview
Key Features
Multi-functional CVD system combined with ICP CVD and probe station.
Maximum substrate temperature: 1,000A C.
Automatic loading available during susceptor heating.
High density plasma source.
PC-control system.
Specifications
Wafer capacity : 6" wafer x 1
Average throughput: 4,800 wafer/year
Dimension : 1,500W A 1,800D A 1,830H (mm3)
Power : ICP Power supply
Bias power supply
Heater : Heating element a c SiC coated graphite(max. temp.:1,200A C)
Gas : Ar/CH4/H2/B2H2/C2H2/O2/N2/NH3
Pump : dry pump, turbo pump, booster pump
Company Details
Focusing on a customer-centric approach, A-Tech System has a pan-India presence and caters to a huge consumer base throughout the country. Buy Industrial Automation in bulk from A-Tech System at Trade India quality-assured products.
Business Type
Manufacturer, Supplier
Establishment
1995
Related Products
Seller Details
Incheon, Incheon
Mr. Yoon Choi
Address
175-25 Cheongcheon-Dong 2, Bupyeong-Gu, Incheon, Incheon, 403-853, Korea South
Industrial Automation in Incheon
Report incorrect details