Silicon Soi Wafer 4" 6" 8"

Our company is looked upon as one of the most reliable manufacturer, exporter, importer, trader and supplier of highly acclaimed Silicon SOI Wafer 4" 6" 8" from Chengdu, Sichuan, China.

Specifications:-
Diameter: 4" 6" 8"
Device Layer
Growth Method: CZ MCZ FZ
Conductivity Type: N type or P type
Crystal Orientation:
Thickness: 0.1-0.5+/-0.01um, 1.50-10.00+/-0.10um, 2-100+/-0.5um
Resistivity: as required
Micro Roughness: 0.2nm, RMS, measured by AFM
LPD: <0.1cm2@0.2um, <0.2cm2@0.3um
Metals Contamination: 5E10 a/cm3 max
Buried Oxide
Thermally Thickness (Buried Oxide): 0.02-3.00+/-3.0um
Handle Substrate Layer
Growth Method: CZ MCZ FZ
Conductivity Type: N type or P type
Crystal Orientation:
Resistivity: 1,000 Ohm.cm min or as required
Backside Finish: Lapped/ Etched / Polished
Packing Method: in form box or cassette, carton box outside
Application: adopts world-leading technologies, major steps containing Implantation of Oxygen or Hydrogen, Cleaning and Bonding & Annealing and Polishing. Main end markets concentrates in ICs and MEMS industry, including Optoelectronics, Smart Power, Advanced Analog ICs, Luxury watches,etc.