Silicon Wafer - 3" To 8" Diameter, Cz Growth Method, 11n Purity, <111>/<100> Orientation, 0.001-150î©â·cm Resistivity
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Product Specifications
| Diameter | 76.2-200mm |
| Features | High Purity, Precise Dimensions, Customizable Thickness, Various Sizes, Superior Quality, Excellent Resistivity, CZ Growth Method |
| Growth Method | CZ |
| Orientation | <111> <100> |
| Purity | 11N |
| Size | 3"-8" |
| Thickness | 160um+ |
| Type | N,P |
Product Overview
Key Features
Size : 3"/4"/5"/6"/8"....
Growth method : CZ
Diameter : 76.2A 0.3mm /100A 0.4mm/ 125A 0.5mm/ 150A 0.5mm/200A 0.5mm
Orientation : <111> <100>
Type : N,P
Purity : 11N(99.999999999%)
Oxygen Content : a 20-36ppma
Carborn Content : a 1ppma
Resistivity Range : 0.001-150ICA.cm
RRV:P type<10%,N type<25%
Thickness : a Y160um, According to your Requirement
Company Details
Shanghai Panmeng Electronic Materials Co., Ltd is listed in Trade India's list of verified sellers offering supreme quality of IC Grade Silicon Lapped Wafer, Silicon Wafer, Solar Grade Silicon Wafers, etc. Buy Silicon Products in bulk from us for the best quality products and service.
Business Type
Exporter
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Seller Details
Shanghai, Shanghai
Name
Sunny Huang
Address
Building A4,No.6638,Beisong Hwy,Songjiang District Shanghai, Shanghai, 201611, China
silicon wafers in Shanghai
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