Indium Phosphide (Inp) Wafer

We are leading manufacturer of Indium Phosphide (Inp) Wafer in Beijing, Beijing, China with following details
Description:
InP is an important semiconductor for both electronic and photonic device due to its good thermal conductivity, high radiation resistance and high electron saturation mobility. SI-InP single crystals are now widely used for the manufacture of high- frequency, high-speed, high-power microwave devices and optoelectronic integrated circuits which are indispensable for wireless technology, Guidance/navigation system, satellite communications and high-speed computers.\
Main parameters:
Diameter: 2'',3'',4''
Orientation: (100)/(111)A 0.5A
Dopant and Type: Fe-Semi-insulating
Resistivity(ICa ccm) a Y1A 107
Mobility(cm2V-1s-1) a Y2000
E.P.D(CM-2) a 10000
Flatness(I m) TTV a 12
Bow a 12
Warp a 15
Thickness(I m) 2 350A 25
3 625A 25
4 1000A 25
Primary Flat Length(mm) 2 16A 2
3 22A 2
4 32.5A 2.5
Secondary Flat Length(mm) 2 8A 1
3 11A 1
4 18A 1

Application:
luminescence of solid
Microwave Communication
Fiber-optic communication
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