Gallium Antimonide (Gasb) Wafer

We are successfully established manufacturer of Gallium Antimonide (GaSb) Wafer in Beijing, Beijing, China with following details.

Description:
GaSb is an important III-V semiconductor for manufacturing midwavelength infrared type II esuperlattice lasers and detectors. The GaSb based infrared lasers and detectors have been widely used to night vision, communications meteorology, atmospheric monitoring, industrial Flaw detection, the eartha s resources exploration, temperature etc.
Main parameters:
Diameter Slices: 2,3,4
Orientation: (100)/(111)A 0.5A
Dopant and Type: Te-N type
Carrier concentration(cm-3) (1-20)A 1017
Mobility(cm2V-1s-1) a Y2000
EPD(CM-2) a 10000
Flatness(I m) TTV a 15
Bow a 15
Warp a 20
Thickness(I m) 2 500A 25
3 625A 25
4 1000A 25
Primary Flat Length(mm) 2 16A 2
3 22A 2
4 32.5A 2.5
Sencondary Flat Length(mm) 2 8A 1
3 11A 1
4 18A 1

Application:
luminescence of solid
Microwave Communication
Fiber-optic communication
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