Gan-based Epitaxial Wafer

We are successfully established manufacturer of GaN-Based Epitaxial Wafer in Beijing, Beijing, China with following details.

Description:
GaN based devices and circuits have important applications in satellite communication, radar, aircraft, electronic warfare systems, aerospace, automation, electric vehicles, transport and distribution of electricity.
Main parameters:
Diameter: 2'',3'',4''
Orientation: (100)/(111)A 0.5A
Dopant and Type: Fe-Semi-insulating
Resistivity(ICa ccm) a Y1A 107
Mobility(cm2V-1s-1) a Y2000
E.P.D(CM-2) a 10000
Flatness(I m) TTV a 12
Bow a 12
Warp a 15
Thickness(I m) 2a a 350A 25
3a a 625A 25
4a a 1000A 25
Primary Flat Length(mm) 2a a 16A 2
3a a 22A 2
4a a 32.5A 2.5
Secondary Flat Length(mm) 2a a 8A 1
3a a 11A 1
4a a 18A 1

Application:
luminescence of solid
Microwave Communication
Fiber-optic communication
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