Igbt Transistors In Shanghai
(39 products)
RGW40N120T1B Trench Field Stop IGBT
VCE1200V
IC40A
VCE(SAT)1.7V
MaterialSilicon
PackageTO-247
FeaturesHigh voltage High ruggedness Low VCE(SAT) Easy parallel Temperature stable Improved reliability Short circuit
Rongtech Industry (shanghai) Inc.
Shanghai
Insulated Gate Bipolar Transistor (Igbt)
VCE(sat)Low voltage
Switching lossesReduced
Short circuit10s
Temperature coefficientPositive
InductanceLow
Case materialCeramic
Tianjin R-switch Import & Export Co. Ltd.
Tianjin
IGBT Power Supply
Input Voltage380V 415V 220V 480V
Output Voltage6-400V
Output Current500A-20000A
Output Power5kW-500kW
CoolingWater/Air
MaterialMetal
Optimum Strength IGBT Modules
TypePower Module
PackageSingle in-line
ShapeSquare
ColorBlack
Voltage600V
Current1200A
Beijing Jietuozijing Science And Technology Co.ltd.
Beijing
Bcx56-16 Sot-89 Transistor - Application: Industrial
MOQ100 Piece/Pieces
FeaturesPremium Quality
Power SourceElectric
ApplicationIndustrial
Rated VoltageUpto 5 Volt (V)
SizeDifferent Available
FunctionElectrical
Shenzhen Dasonghe Trading Co. Ltd.
Shenzhen
Trusted Seller1 Years
Transistor IGBT Tube Inline
MaterialSilicon
Dimensions10x10x5mm
Voltage600V
Current100A
Power600W
Leads3
1220V/40A Trench Field Stop IGBT
Voltage1200V
Current40A
VCE(sat)2.0V
TechnologyTrench-Stop
PackageTO-247
UsageUPS solar inverters welding PFC
High Frequency Induction Heating IGBT Power Supplies
Price: 1425 USD ($)/Set
MOQ3 Set/Sets
Applicationhard chrome plating
Output TypeSingle
Output Current15000 Ampere (amp)
Working Temperature35-50 Celsius (oC)
Noise Level<65 db
PhaseSingle Phase
TSM504 IGBT Module
MaterialSilicon carbide
Dimensions50x60x70mm
Voltage1200V
Current400A
Weight0.5kg
Operating Temp150°C
(FM2G15OUS60) IGBT Module
MaterialSilicon
Dimensions60x60x20mm
Voltage600V
Current50A
Weight1kg
Operating temperature150°C
(F4-400R12KS4B2) IGBT Module
MaterialSilicon carbide
Dimensions110 x 70 x 30 mm
Voltage1200V
Current400A
Power48kW
Weight1kg
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| Company Name | Currency | Product Name | Price |
|---|---|---|---|
| - | - | IGBT Power Supply | 1680 USD ($) (Approx.) |
What is the delivery time for igbt transistors in Shanghai?
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FS225R12K3-S1-A5E012832913 IGBT Module
MaterialSilicon
Dimensions100x100mm
Voltage1200V
Current225A
PackageModule
MountingSurface mount
Bcp53-16 Sot-223-3 Transistor - Application: Industrial
MOQ100 Piece/Pieces
FeaturesPremium Quality
ApplicationIndustrial
Rated Voltage1 To 5 Volt (V)
SizeDifferent Available
FunctionElectrical
ColorAs Per Availability
Bsr16 Sot-23-3 Transistor - Application: Industrial
MOQ100 Piece/Pieces
FeaturesPremium Quality
ApplicationIndustrial
Rated Voltage1 To 5 Volt (V)
SizeDifferent Available
FunctionElectrical
ColorAs Per Availability
Bcp56-16 Sot-223-3 Transistor - Application: Industrial
MOQ100 Piece/Pieces
FeaturesPremium Quality
ApplicationIndustrial
Rated Voltage1 To 5 Volt (V)
SizeDifferent Available
FunctionElectrical
ColorAs Per Availability
Transistor IGBT Module
MaterialSemiconductor
DimensionsModule Size
VoltageInput Voltage
CurrentOutput Current
WeightModule Weight
PackagingStandard Packaging
IGBT Chip Transistor Module
MaterialSilicon
Dimensions10x10mm
Voltage600V
Current100A
Power10kW
Switching speed1us
MOSFET Transistor
MaterialSilicon
Dimensions10x5x3mm
Power rating50W
Operating voltage60V
Operating temperature150°C
PackagingSurface mount
Power Transistor
MaterialSilicon
DimensionsTO-3P
Voltage50V
Current10A
Power50W
PackageTO-3
Bipolar Darlington Transistor
MaterialMetal
PackageSurface Mount
Dimensions5mm x 5mm
Current Gain10000
Voltage50V
Power0.5W
High Frequency Transistor
MaterialSilicon
FrequencyHigh
PowerHigh
PackagingAir sealed
MountingSurface mount
Case StyleSOT-23
N-CH 500V 24A 3-Pin MOSFET Transistor
Voltage500V
Current24A
Pins3-Pin
MaterialSilicon
PackageTO-220
FeaturesHigh voltage High current Fast switching Reliable operation Compact size Easy to use Cost effective
N-CH 80V 6.5A MOSFET Transistor
MaterialSilicon
Dimensions5x6mm
Voltage80V
Current6.5A
PackageSOT23
Operating temperature-55°C to 150°C
N-CH 30V 1.2A 3-Pin MOSFET Transistor
MaterialSilicon
Voltage30V
Current1.2A
Pins3-Pin
PackageTO-92
FeaturesHigh voltage Fast switching Low RDS(on) Reliable performance Durable design Compact size Cost effective
DIP8 Induction Cooker Power Switch Mosfet Transistor
PackageDIP8
MaterialPlastic
Dimensions5x5mm
Voltage60V
Current50A
Resistance10mΩ
Ixbh20N300 Ixys Igbt 3000V 20A To-247-3 Application: Electronic Items
Product TypeIXBH20N300 IXYS IGBT
ApplicationElectronic Items
ColorBlack Grey
Leading(hk) Ic Distributor Limited
Shenzhen
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