Power Transistor In Shanghai
(56 products)
ISC Power Transistor NPN 2N3055
Power115W
Current15A
Voltage100V
Gain20-70
PackageTO-3
MaterialSemiconductor
Inchange Semiconductor Company Limited
Wuxi
500V Super Junction Power Transistor - Material: Silicon
Price: 1.0 USD ($)/Unit
MOQ100 Unit/Units
Product TypeSuper Junction Power Transistor
ApplicationOther Power supplies motor drives lighting inverter circuits industrial controls
Supply Voltage500V
Dissipation Power210W
Operating Temperature-55C to +150C
Power ConsumptionLow (high efficiency design)
Nova Import & Export Trade Co.ltd
Yangzhou
2 Years
High Power Transistor Ceramic Package CuW Flanges - CuW Composite Variable Dimensions Ni/Au Plated | High Conductivity Hermeticity Precise Size Flatness
MaterialCuW composite
PlatingNi/Au
CTE MatchCeramics Si Kovar
Thermal ConductivityHigh
DimensionsVariable
Surface FinishExcellent
Zhuzhou Jiabang Refractory Metal Co. Ltd.
Zhuzhou
Bu931zl Npn Power Darington Transistor
MaterialSilicon
PackageTO-220
Voltage60V
Current10A
Power60W
Temperature-55°C to 150°C
Power Transistor
MaterialSilicon
DimensionsTO-3P
Voltage50V
Current10A
Power50W
PackageTO-3
Power Transistor Silicon N Channel Igbt 600v 80avices
Price: 11 USD ($)/Piece
UsageElectric Devices
Product TypePower Transistor
Rated Voltage600 Volt (V)
ColorBlack
Complementary Power Transistor - Silicon TO-220 60V 10A 65W | High Speed Improved Linearity Power Switching Audio Amplifier
PackageTO-220
TypeNPN/PNP
Power65W
Voltage60V
Current10A
UsageAudio amplifiers power supplies motor control
Large And Small Power Transistor
MaterialSilicon
Dimensions5x5mm
Power100W
Voltage50V
Current2A
PackageTO-220
Leading(hk) Ic Distributor Limited
Shenzhen
RF Power Transistors
Frequency Range0.5-12GHz
Power Output0.1-150W
Impedance50ohm
VSWR<1.07
Package TypeSurface Mount
MaterialSilicon
2Sa1075 Power Transistor
TypePNP Transistor
PackageMT-200
PowerHigh power
FrequencyHigh frequency
VoltageRange
CurrentRange
2Sc898 ISC Silicon NPN Power Transistor
MaterialSilicon
TypeNPN
PackageTO-92
Voltage40V
Current1A
Power0.5W
LD758 Photoelectric Switch ASIC - Plastic 3x3mm SOIC8 | High Speed Low Power Versatile Reliable Detection
Package typeSOIC8
Operating voltage5V
Dimensions3x3mm
MaterialPlastic
Operating temperature-40°C to 85°C
SensitivityHigh
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| Company Name | Currency | Product Name | Price |
|---|---|---|---|
| - | - | 500V Super Junction Power Transistor | 1.0 USD ($) (Approx.) |
| - | - | Power Transistor | 0.01 USD ($) (Approx.) |
| - | - | Power Transistor Silicon N Channel | 11 USD ($) (Approx.) |
What is the delivery time for power transistor in Shanghai?
U6083B PWM Power Controller IC
Part NumberU6083B
TechnologyBipolar
PackageDIP8 SOP8
Operating Voltage5-12V
Output Current1A
Switching Frequency50kHz
TDA1185A Triac Phase Angle Controller - Plastic DIP 16-Pin 6mA 50/60Hz | Speed Control Soft Start Low Power Reliable Versatile
PackageDIP
Pins16
VoltageAC Line
MaterialPlastic
Frequency50/60Hz
Current6mA
U6046B Rear Window Heating Timer IC - Silicon 3x3mm & 5x7mm 10mA 5V 10kHz | Precise Timing Long-Term Stability Low Power Compact SOP8/DIP8
PackageSOP8 DIP8
MaterialSilicon
Voltage5V
Current10mA
Temperature0-70°C
Dimensions3x3mm 5x7mm
Transistor IGBT Module
MaterialSemiconductor
DimensionsModule Size
VoltageInput Voltage
CurrentOutput Current
WeightModule Weight
PackagingStandard Packaging
Transistor IGBT Tube Inline
MaterialSilicon
Dimensions10x10x5mm
Voltage600V
Current100A
Power600W
Leads3
Bluetooth Module - Carbide Tungsten 20mm x 15mm | 3.3V Operating Voltage 4dBm Transmit Power 1Mbps Data Rate Integrated Antenna
MaterialCarbide Tungsten
InterfaceController
AntennaIntegrated
ConnectorEdge
PowerHigh transmit
ModulationBluetooth SPF
Power Shielded Wire Wound Inductor
Inductance14µH
MaterialFerrite core
Dimensions5x5x3mm
Operating Temp-40°C to +85°C
Current rating1A
Tolerance±10%
MOSFET Transistor
MaterialSilicon
Dimensions10x5x3mm
Power rating50W
Operating voltage60V
Operating temperature150°C
PackagingSurface mount
Bipolar Darlington Transistor
MaterialMetal
PackageSurface Mount
Dimensions5mm x 5mm
Current Gain10000
Voltage50V
Power0.5W
N-CH 500V 24A 3-Pin MOSFET Transistor
Voltage500V
Current24A
Pins3-Pin
MaterialSilicon
PackageTO-220
FeaturesHigh voltage High current Fast switching Reliable operation Compact size Easy to use Cost effective
Toroid Power Inductor
MaterialFerrite
Dimensions10x10x5mm
Inductance10uH
Current1A
Resistance100mΩ
Temperature125°C
High Frequency Transistor - Silicon SOT-23 | High Power Fast Switching Air Sealed Packaging
MaterialSilicon
FrequencyHigh
PowerHigh
PackagingAir sealed
MountingSurface mount
Case StyleSOT-23
IGBT Chip Transistor Module - Silicon 10x10mm 600V 100A 10kW | High Efficiency Fast Switching Voltage Stable Easy Handling
MaterialSilicon
Dimensions10x10mm
Voltage600V
Current100A
Power10kW
Switching speed1us
DIP8 Induction Cooker Power Switch Mosfet Transistor
PackageDIP8
MaterialPlastic
Dimensions5x5mm
Voltage60V
Current50A
Resistance10mΩ
To-220 Power Amplifier NPN Epitaxial Transistors D880
PackageTO-220
TypeNPN
MaterialSilicon
Voltage50V
Current10A
Power50W
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