Igbt Transistors In Beijing
(39 products)
IGBT Power Supply - Metal Build Variable Dimensions 6-400V DC Output 500A-20000A 5kW-500kW Water/Air Cooling | High Efficiency Compact Design Modular Structure High Reliability Easy Maintenance Energy Saving High Power Factor
CoolingWater/Air
DimensionsVariable
FeaturesHigh Efficiency Compact Design Modular Structure High Reliability Easy Maintenance Low Cost Energy Saving High Power Factor
Input Voltage380V 415V 220V 480V
MaterialMetal
Output Current500A-20000A
Optimum Strength IGBT Modules - Black 1200A 600V | Compact Single In-line Power Module Efficient Switching Reliable Performance
ColorBlack
Current1200A
FeaturesHigh power Compact design Reliable performance Efficient switching Easy installation
PackageSingle in-line
ShapeSquare
TypePower Module
Beijing Jietuozijing Science And Technology Co.ltd.
Beijing
Insulated Gate Bipolar Transistor (Igbt)
Case materialCeramic
FeaturesLow losses Fast switching High reliability Durable design Compact size Easy mounting
InductanceLow
Short circuit10s
Switching lossesReduced
Temperature coefficientPositive
Tianjin R-switch Import & Export Co. Ltd.
Tianjin
1220V/40A Trench Field Stop IGBT
ComplianceIEC
Current40A
FeaturesHigh voltage Fast switching High ruggedness Easy parallel Temperature stable Low VCEsat
PackageTO-247
TechnologyTrench-Stop
UsageUPS solar inverters welding PFC
Rongtech Industry (shanghai) Inc.
Shanghai
Bcx56-16 Sot-89 Transistor - Application: Industrial
MOQ100 Piece/Pieces
Power SourceElectric
FeaturesPremium Quality
ApplicationIndustrial
Rated VoltageUpto 5 Volt (V)
SizeDifferent Available
FunctionElectrical
Shenzhen Dasonghe Trading Co. Ltd.
Shenzhen
Transistor IGBT Tube Inline
Current100A
Dimensions10x10x5mm
FeaturesEasy Installation Compact Size Heat Resistant Reliable Control Durable Design Voltage Control Speed Control
Leads3
MaterialSilicon
PackageTO-220
High Frequency Induction Heating IGBT Power Supplies
Price: 1425 USD ($)/Set
MOQ3 Set/Sets
Applicationhard chrome plating
Output TypeSingle
Output Current15000 Ampere (amp)
Working Temperature35-50 Celsius (oC)
Noise Level<65 db
PhaseSingle Phase
(F4-400R12KS4B2) IGBT Module
Current400A
Dimensions110 x 70 x 30 mm
FeaturesHigh power Fast switching Reliable Durable Efficient Compact Cost-effective
MaterialSilicon carbide
PackagingCarton
Power48kW
TSM504 IGBT Module
Current400A
Dimensions50x60x70mm
FeaturesHigh power Fast switching Durable Reliable Efficient
MaterialSilicon carbide
MountingBolt-on
Operating Temp150°C
(FM2G15OUS60) IGBT Module
Current50A
Dimensions60x60x20mm
FeaturesHigh power Fast switching Reliable operation Durable design Compact size Easy installation Cost effective
MaterialSilicon
Operating temperature150°C
PackagingBulk
FS225R12K3-S1-A5E012832913 IGBT Module - Silicon 100x100mm 1200V 225A | High Power Fast Switching Reliable Operation
Current225A
Dimensions100x100mm
FeaturesHigh power Fast switching Reliable operation Compact design Easy installation Long lifespan Cost effective
MaterialSilicon
MountingSurface mount
PackageModule
FAQs Related to Igbt Transistors In Beijing
How many igbt transistors products are available in Beijing?
Where can I find igbt transistors nearby Beijing?
What are some related categories to igbt transistors in Beijing?
Can I trust the Beijing Based Igbt Transistors suppliers listed on Tradeindia?
How many Beijing based Igbt Transistors manufacturers are there?
What is the price range of igbt transistors in Beijing?
| Company Name | Currency | Product Name | Price |
|---|---|---|---|
| - | - | IGBT Power Supply | 1680 USD ($) (Approx.) |
What is the delivery time for igbt transistors in Beijing?
RGW40N120T1B - Silicon TO-247 1200V 40A 1.7V VCE(SAT) | High Ruggedness Temperature Stable Low VCE(SAT) Short Circuit Withstand
FeaturesHigh voltage High ruggedness Low VCE(SAT) Easy parallel Temperature stable Improved reliability Short circuit
IC40A
MaterialSilicon
PackageTO-247
VCE1200V
VCE(SAT)1.7V
Bsr16 Sot-23-3 Transistor - Application: Industrial
MOQ100 Piece/Pieces
FeaturesPremium Quality
ApplicationIndustrial
Rated Voltage1 To 5 Volt (V)
SizeDifferent Available
FunctionElectrical
ColorAs Per Availability
Bcp56-16 Sot-223-3 Transistor - Application: Industrial
MOQ100 Piece/Pieces
FeaturesPremium Quality
ApplicationIndustrial
Rated Voltage1 To 5 Volt (V)
SizeDifferent Available
FunctionElectrical
ColorAs Per Availability
Bcp53-16 Sot-223-3 Transistor - Application: Industrial
MOQ100 Piece/Pieces
FeaturesPremium Quality
ApplicationIndustrial
Rated Voltage1 To 5 Volt (V)
SizeDifferent Available
FunctionElectrical
ColorAs Per Availability
Transistor IGBT Module
CurrentOutput Current
DimensionsModule Size
FeaturesFast switching High efficiency Three-terminal Durable design Reliable operation Compact size Easy installation
MaterialSemiconductor
OperatingTempOperating Range
PackagingStandard Packaging
MOSFET Transistor
Dimensions10x5x3mm
FeaturesHigh power Fast switching Low RDS(on) Durable Heat resistant Easy handling
Lead freeYes
MaterialSilicon
Operating temperature150°C
Operating voltage60V
Power Transistor
Current10A
DimensionsTO-3P
FeaturesHigh power Easy to use Amplify signals Switch signals Durable Cost effective Bulk Available
MaterialSilicon
PackageTO-3
Power50W
Bipolar Darlington Transistor
Current Gain10000
Dimensions5mm x 5mm
FeaturesHigh Current Gain Easy to Use Rust Proof Durable Versatile Cost Effective High Reliability
MaterialMetal
PackageSurface Mount
Power0.5W
N-CH 500V 24A 3-Pin MOSFET Transistor
Current24A
FeaturesHigh voltage High current Fast switching Reliable operation Compact size Easy to use Cost effective
MaterialSilicon
PackageTO-220
Pins3-Pin
Voltage500V
IGBT Chip Transistor Module - Silicon 10x10mm 600V 100A 10kW | High Efficiency Fast Switching Voltage Stable Easy Handling
Current100A
Dimensions10x10mm
FeaturesHigh efficiency Easy handling Long lasting Voltage stable Fast switching Reliable operation Compact design
MaterialSilicon
PackageTO-247
Power10kW
High Frequency Transistor - Silicon SOT-23 | High Power Fast Switching Air Sealed Packaging
Case StyleSOT-23
FeaturesHigh frequency High power Fast switching Durable Reliable
FrequencyHigh
MaterialSilicon
MountingSurface mount
PackagingAir sealed
N-CH 80V 6.5A MOSFET Transistor
Current6.5A
Dimensions5x6mm
FeaturesHigh power Fast switching Low RDS(on) Robust design Compact size Cost effective
Lead freeYes
MaterialSilicon
Operating temperature-55°C to 150°C
N-CH 30V 1.2A 3-Pin MOSFET Transistor
Current1.2A
FeaturesHigh voltage Fast switching Low RDS(on) Reliable performance Durable design Compact size Cost effective
MaterialSilicon
PackageTO-92
Pins3-Pin
Voltage30V
DIP8 Induction Cooker Power Switch Mosfet Transistor
Current50A
Dimensions5x5mm
FeaturesHigh power Fast switching Compact design Durable Reliable performance Easy installation Cost effective
MaterialPlastic
PackageDIP8
Resistance10mΩ
Ixbh20N300 Ixys Igbt 3000V 20A To-247-3 Application: Electronic Items
Product TypeIXBH20N300 IXYS IGBT
ApplicationElectronic Items
ColorBlack Grey
Leading(hk) Ic Distributor Limited
Shenzhen
Popular Categories in Beijing
Popular Products
© 1999-2026 Infocom Network Private Limited. All rights reserved.