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Hitachi Igbt Module

Hitachi Igbt Module

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In Stock

In Stock

Product Specifications

MaterialSilicon
Dimensions60x40x15mm
VCES1200V
VCE(on)1.8V
IC(max)200A
IGES10µA
Switching Speed50kHz
Tr50ns
Tf100ns
PD100W
TJ150°C
FeaturesHigh power, Fast switching, Reliable operation, Compact design, Easy installation

Product Overview

Key Features

Polarity
Your choices are...
N-Channel A field-effect transistor with the channel made of N-type material.
P-Channel A field-effect transistor with the channel made of P-type material.
Other Other unlisted polarity type.
Search Logic: All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches.
VCES Collector-emitter breakdown voltage is the maximum voltage between the collector and the emitter before breakdown.
Search Logic: All matching products will have a value greater than or equal to the specified value.
VCE(on) Collector-emitter on voltage is also known as the collector-emitter saturation voltage.
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IC(max) Maximum IGBT collector current.
Search Logic: All matching products will have a value greater than or equal to the specified value.
IGES Gate-emitter leakage current.
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Switching Speed The maximum speed at which the IGBT can switch without exceeding its design parameters. Generally measured in hertz (Hz).
Search Logic: All matching products will have a value greater than or equal to the specified value.
tr Rise time.
Search Logic: All matching products will have a value less than or equal to the specified value.
tf Fall time.
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PD The power dissipation is the total power consumption of the device. It is generally expressed in watts or milliwatt. When a transistor conducts current between collector and emitter, it also drops voltage between those two points. At any given time, the power dissipated by a transistor is equal to the product of collector current and collector-emitter voltage. Just like resistors, transistors are rated in terms of how many watts they can safely dissipate without sustaining damage. High temperature is the mortal enemy of all semiconductor devices, and bipolar transistors tend to be more susceptible to thermal damage than most. Power ratings are always given in reference to the temperature of ambient (surrounding) air. When transistors are to be used in hotter-than-normal environments, their power ratings must be derated to avoid a shortened service life.
Search Logic: All matching products will have a value less than or equal to the specified value.
TJ This is the full-required range of ambient operating temperature of the junction.
Search Logic: User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria.

Company Details

VISHAL SEMICONDUCTOR, Established in 2000 at Kolkata in West Bengal, is a leading Supplier,Trading Company of Electrical Goods, Equipment & Supplies in India. VISHAL SEMICONDUCTOR is one of Trade India's verified and trusted sellers of listed products. With extensive experience in supplying and trading Hitachi Igbt Module, VISHAL SEMICONDUCTOR has made a reputed name for itself in the market with high-quality Bridge Rectifiers, Electrical Terminal, Eupec Igbt, etc.
Focusing on a customer-centric approach, VISHAL SEMICONDUCTOR has a pan-India presence and caters to a huge consumer base throughout the country. Buy Electrical Goods, Equipment & Supplies in bulk from VISHAL SEMICONDUCTOR at Trade India quality-assured products.

Business Type

Supplier, Trading Company

Employee Count

10

Establishment

2000

Working Days

Monday To Sunday

GST NO

19AAFPO9880P1ZK

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Seller Details

GST

GST - 19AAFPO9880P1ZK

Kolkata, West Bengal

Proprietor

Mr. Satendra Kumar Ojha

Address

3-C, Madan Street, Shop No.-2, Opp-L.I.C. Building, Kolkata, West Bengal, India

igbt modules in Kolkata

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Buyer Feedback

4

Price Or Price Range

6500 INR (Approx.)

2000 INR (Approx.)

Minimum Order Quantity

1 Piece/Pieces

1 Piece/Pieces

Overheating Protection

Other, Yes (with external control)

YES

Humidity %

Max 95%

<95% RH

Insulation Material

Plastic Molded

Epoxy Resin

Power Factor

High

>0.95

Feature

Low VCE(sat), High Power Density, Robust Design

High Switching Speed, Low Losses

Connector Type

Screw

Screw Terminal

Shape

Rectangular

Rectangular

Mounting Type

Chassis Mount

Panel Mount

Color

Black

Black

Efficiency

Up to 98%

>98%

IP Rating

IP00 (Open Frame)

IP20

Surface Finish

Molded Plastic

Matte

Operating Temperature

-40AdegC to 150AdegC

-40C to +150C

Product Type

IGBT Power Module

IGBT Module

Application

Industrial Motor Drives, Inverters, Servo Drives, UPS Systems

Industrial Automation, Motor Drive

Protection Level

Other, Standard

Other, IP20

Frequency (MHz)

DC to 20 kHz (Switching Frequency)

50-60

Rated Voltage

1200 V

1200 V

Energy Consumption

High Efficiency

Low

Output Type

AC/DC

DC

Dimension (L*W*H)

138 mm x 55 mm x 30 mm

138 mm x 62 mm x 30 mm

Weight

742 g

420 g

Size

Standard

Standard

Input Voltage

1200 V Max

600 V

Phase

Three Phase

Three Phase

Connection Type

Screw Terminal

Screw Terminal

Material

Semiconductor Module

Plastic, Copper

No Of Poles

Three

3

Payment Terms

Letter of Credit (L/C), Letter of Credit at Sight (Sight L/C), Telegraphic Transfer (T/T), Paypal, Western Union, Cash Advance (CA), Others, Delivery Point (DP), Days after Acceptance (DA), Cash in Advance (CID), Cheque

Cash in Advance (CID)

Supply Ability

100 Per Day

100 Per Day

Delivery Time

1 Days

1 Minutes

Sample Available

Yes

Yes

Sample Policy

Contact us for information regarding our sample policy

Free samples are available

Packaging Details

AS PER CUSTOMER

FINE

Main Export Market(s)

Australia, North America, South America, Eastern Europe, Western Europe, Middle East, Africa, Central America, Asia

Asia

Main Domestic Market

All India

All India

Certifications

INFINEON FF150R12KE3G

CE