Fuji Igbt Module
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Product Specifications
| Material | Silicon |
| Dimensions | 60x60mm |
| Voltage | 600V |
| Current | 60A |
| Power | 3600W |
| Temperature | -40°C to 150°C |
| Weight | 0.5kg |
| Features | High power, Fast switching, Reliable operation, Compact design, Durable, Efficient, Cost-effective |
Product Overview
Key Features
| Polarity | |||
| Your choices are... | |||
| N-Channel | A field-effect transistor with the channel made of N-type material. | ||
| P-Channel | A field-effect transistor with the channel made of P-type material. | ||
| Other | Other unlisted polarity type. | ||
| Search Logic: | All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches. | ||
| VCES | Collector-emitter breakdown voltage is the maximum voltage between the collector and the emitter before breakdown. | ||
| Search Logic: | All matching products will have a value greater than or equal to the specified value. | ||
| VCE(on) | Collector-emitter on voltage is also known as the collector-emitter saturation voltage. | ||
| Search Logic: | All matching products will have a value less than or equal to the specified value. | ||
| IC(max) | Maximum IGBT collector current. | ||
| Search Logic: | All matching products will have a value greater than or equal to the specified value. | ||
| IGES | Gate-emitter leakage current. | ||
| Search Logic: | All matching products will have a value less than or equal to the specified value. | ||
| Switching Speed | The maximum speed at which the IGBT can switch without exceeding its design parameters. Generally measured in hertz (Hz). | ||
| Search Logic: | All matching products will have a value greater than or equal to the specified value. | ||
| tr | Rise time. | ||
| Search Logic: | All matching products will have a value less than or equal to the specified value. | ||
| tf | Fall time. | ||
| Search Logic: | All matching products will have a value less than or equal to the specified value. | ||
| PD | The power dissipation is the total power consumption of the device. It is generally expressed in watts or milliwatt. When a transistor conducts current between collector and emitter, it also drops voltage between those two points. At any given time, the power dissipated by a transistor is equal to the product of collector current and collector-emitter voltage. Just like resistors, transistors are rated in terms of how many watts they can safely dissipate without sustaining damage. High temperature is the mortal enemy of all semiconductor devices, and bipolar transistors tend to be more susceptible to thermal damage than most. Power ratings are always given in reference to the temperature of ambient (surrounding) air. When transistors are to be used in hotter-than-normal environments, their power ratings must be derated to avoid a shortened service life. | ||
| Search Logic: | All matching products will have a value less than or equal to the specified value. | ||
| TJ | This is the full-required range of ambient operating temperature of the junction. | ||
| Search Logic: | User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria. | ||
Company Details
Focusing on a customer-centric approach, VISHAL SEMICONDUCTOR has a pan-India presence and caters to a huge consumer base throughout the country. Buy Electrical Goods, Equipment & Supplies in bulk from VISHAL SEMICONDUCTOR at Trade India quality-assured products.
Business Type
Supplier, Trading Company
Employee Count
10
Establishment
2000
Working Days
Monday To Sunday
GST NO
19AAFPO9880P1ZK
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Seller Details
GST - 19AAFPO9880P1ZK
Kolkata, West Bengal
Proprietor
Mr. Satendra Kumar Ojha
Address
3-C, Madan Street, Shop No.-2, Opp-L.I.C. Building, Kolkata, West Bengal, India
igbt modules in Kolkata
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