Qfn5*7 650v 90mohm Gan Mosfet With Integrated Driver And Protection

The DTQ13N65GN is a 90mohm, 650V GaN HEMT device with integrated driver circuit. The monolithic integration of driver minimizes inductance in the gate loop enabling safe
and clean switching even at high-voltage high-frequency operations. This device makes the applications more efficient/reliable, and also reduces the size of the magnetic components dramatically. UVLO function of the device turns-off the HEMT in case VDD voltage droops below its threshold voltage. A proprietary dv/dt protection circuit protects the HEMT from drain-dvdt induced false turn-on even in the absence of VDD
supply. An external resistance between Vreg and RG allows control of drain voltage slew rate for best EMI performance.

Features
1. 650V enhancement mode HEMT with integrated driver
2. 90mA AC RDSON
3. 5V PWM input
4. UVLO protection
5. Zero reverse recovery
6. Low quiescent current driver
7. Adjustable turn-on slew rate
8. Dv/Dt immunity both with/without driver-supply
9. Low propagation delay for up to 2MHz operation