Plasma Emission Controller

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Aster deposition by controlling the transition region
Optimized distribution in a large-area, high-capacity chamber
Plasma stabilization in a long sputtering process (stable deposition)
Mixture optimization of compounds for reactive sputtering
The RU-1000 plasma emission controller achieves excellent spatial distribution of deposition on substrates with large surface areas.
Reactive sputtering is performed for film deposition on films and glass substrates used for touch panels. This method is employed to form a deposited film by chemical reactions between sputtered particles and oxygen, nitrogen or the like in a vacuum chamber. Unfortunately, practical application has been deemed too difficult considering the slow pace of film deposition when a constant volume of reactive gas is supplied. However, the film deposition dramatically accelerates, albeit unstably, in a transition region between the reactive mode and metallic mode, the latter of which results in faster film deposition. Such a transition region can be maintained by controlling the reactive gas by adjusting the intensity of plasma emission and the power supply.