Gfet-s12 For Sensing Applications
Price: 8000.00 INR / Number
(8000.00 INR + 0% GST)
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1 Pack Contains :
1
Minimum Pack Size :
1
In Stock
-1+
Product Specifications
| Interface | 2-terminal/4-terminal with connectable electrodes |
| Voltage | 0 to 2 V (Recommended Gate/Drain voltage) |
| Measuring Range | Highly sensitive, varies with analyte; typical detection limits in nM to pM range |
| Driven Type | Electric field |
| Weight | Approx. 3.2 g |
| Size | 12 mm x 12 mm |
| Frequency | DC to 100 kHz |
| Power | Low power consumption, <10 mW |
| Usage & Applications | Sensing applications including chemical, biological, and environmental analyte detection |
| Display | Not Applicable (output via signal measurement device) |
| Material | Graphene Field Effect Transistor (GFET) |
| Temperature | Operating Range: -10AdegC to +85AdegC |
| Supply Ability | 5 Per Day |
| Delivery Time | 25 Days |
| Packaging Details | seal pack |
| Main Domestic Market | All India |
| Stock Quantity | 405 |
| Returnable | No |
| Mop | 1 |
| Packsize | 1 |
| Moq | 1 |
| Price | 8000.00 INR (Approx.) |
| Currency | INR |
| Product Unit | 40 Number, |
| Unit Type | Number, |
| Price Type | fixed |
| Brand Name | Graphenea |
| Minimum Ordered Packs | 1 |
| Minimum Order Quantity | 1 |
| GSTIN | 0% |
Product Overview
Key Features
TYPICAL SPECIFICATIONS
Growth method: CVD synthesis
Chip dimensions: 10 mm x 10 mm
Chip thickness: 675
Number of GFETs per chip: 27
Gate oxide thickness: 90 nm
Gate oxide material: SiO2
Dielectric Constant of the SiO2 layer: 3.9
Resistivity of substrate: 1-10 ohm cm
Metallization: Chromium/Gold 5/45nm
Graphene field-effect mobility: >1000 cm2/V.s
Dirac point: <50 V
Minimum working devices: >75 %
ABSOLUTE MAXIMUM RATINGS
Maximum gate-source voltage: A A 50 V
Maximum temperature rating: 150 A A C
Maximum drain-source current density 107A.cm-2
Growth method: CVD synthesis
Chip dimensions: 10 mm x 10 mm
Chip thickness: 675
Number of GFETs per chip: 27
Gate oxide thickness: 90 nm
Gate oxide material: SiO2
Dielectric Constant of the SiO2 layer: 3.9
Resistivity of substrate: 1-10 ohm cm
Metallization: Chromium/Gold 5/45nm
Graphene field-effect mobility: >1000 cm2/V.s
Dirac point: <50 V
Minimum working devices: >75 %
ABSOLUTE MAXIMUM RATINGS
Maximum gate-source voltage: A A 50 V
Maximum temperature rating: 150 A A C
Maximum drain-source current density 107A.cm-2
Company Details
Nano-materials with uniform composition and those that are free from any adulterants are suited for research and production purposes. In the year 2016, we, Ultrananotech Private Limited, established ourselves and from then onwards, we are constantly catering to premium quality nano materials such as Copper Oxide Nanoparticles, Zinc Oxide Nanoparticle in the market. Line of our products comprises carbon based nano (various graphene, graphene oxide, nano tubes, graphite), CVD graphene on various substrate, Any types wafers, Any types of sputtering target, any metal nano powders, me
Business Type
Manufacturer, Distributor, Supplier, Trading Company, Retailer
Employee Count
10
Establishment
2016
Working Days
Monday To Sunday
GST NO
29AABCU9740P1ZH
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Seller Details
GST - 29AABCU9740P1ZH
Bengaluru, Karnataka
Managing Director
Mr Arup Purkayastha
Members since
9 Years
Address
B- 205, Prime Blue Forest, Rajapallya, Hoodi, Bengaluru, Karnataka, 560048, India
remote sensing device in Bengaluru
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