Sensor Sic Based Uv Photodiode Sg01d-5lens

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SiC based UV photodiode SG01D-5LENS
Concentrator lens SiC based UV photodiode Avirtual = 11.0 mm2

Properties of the SG01D-5LENS UV photodiode
a Broadband UVA+UVB+UVC, PTB reported high chip stability, for very weak radiation
a Radiation sensitive area A = 11.0 mm2
a TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
a 10I W/cm2 peak radiation results a current of approx. 350 nA

Spectral Characteristics
Typical Responsivity at Peak Wavelength: 0.130 A/W
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range (S=0.1*Smax ): 221 a 358nm
Visible Blindness (Smax/S >405nm ):>10 10

General Characteristics (T=25'C)
Sensitive Area (chip size = 0,50 mm 2 ): 11.0 mm2
Dark Current (1V reverse bias): 1.7fA
Capacitance: 125pF
Short Circuit (10I W/cm 2 at peak): 350nA
Temperature Coefficient: 0.1%/K

Maximum Ratings
Operating Temperature: a 55 a +170 A C
Storage Temperature: a 55 a +170 A C
Soldering Temperature (3s): 260A C
Reverse Voltage: 20V