Power Transistor In Beijing
(52 products)
Bu931zl Npn Power Darington Transistor
MaterialSilicon
PackageTO-220
Voltage60V
Current10A
Power60W
Temperature-55°C to 150°C
500V Super Junction Power Transistor - Material: Silicon
Price: 1.0 USD ($)/Unit
MOQ100 Unit/Units
Product TypeSuper Junction Power Transistor
ApplicationOther Power supplies motor drives lighting inverter circuits industrial controls
Supply Voltage500V
Dissipation Power210W
Operating Temperature-55C to +150C
Power ConsumptionLow (high efficiency design)
Nova Import & Export Trade Co.ltd
Yangzhou
2 Years
ISC Power Transistor NPN 2SC3835
Power70W
Current7A
Voltage200V
Gain70-220
PackageTO-3PN
TypeNPN
Inchange Semiconductor Company Limited
Wuxi
High Power Transistor Ceramic Package CuW Flanges - CuW Composite Variable Dimensions Ni/Au Plated | High Conductivity Hermeticity Precise Size Flatness
MaterialCuW composite
PlatingNi/Au
CTE MatchCeramics Si Kovar
Thermal ConductivityHigh
DimensionsVariable
Surface FinishExcellent
Zhuzhou Jiabang Refractory Metal Co. Ltd.
Zhuzhou
Power Transistor
MaterialSilicon
DimensionsTO-3P
Voltage50V
Current10A
Power50W
PackageTO-3
Power Transistor Silicon N Channel Igbt 600v 80avices
Price: 11 USD ($)/Piece
UsageElectric Devices
Product TypePower Transistor
Rated Voltage600 Volt (V)
ColorBlack
Complementary Power Transistor - Silicon TO-220 60V 10A 65W | High Speed Improved Linearity Power Switching Audio Amplifier
PackageTO-220
TypeNPN/PNP
Power65W
Voltage60V
Current10A
UsageAudio amplifiers power supplies motor control
Large And Small Power Transistor
MaterialSilicon
Dimensions5x5mm
Power100W
Voltage50V
Current2A
PackageTO-220
Leading(hk) Ic Distributor Limited
Shenzhen
RF Power Transistors
Frequency Range0.5-12GHz
Power Output0.1-150W
Impedance50ohm
VSWR<1.07
Package TypeSurface Mount
MaterialSilicon
2Sa1075 Power Transistor
TypePNP Transistor
PackageMT-200
PowerHigh power
FrequencyHigh frequency
VoltageRange
CurrentRange
2Sc898 ISC Silicon NPN Power Transistor
MaterialSilicon
TypeNPN
PackageTO-92
Voltage40V
Current1A
Power0.5W
U6083B PWM Power Controller IC
Part NumberU6083B
TechnologyBipolar
PackageDIP8 SOP8
Operating Voltage5-12V
Output Current1A
Switching Frequency50kHz
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| Company Name | Currency | Product Name | Price |
|---|---|---|---|
| - | - | 500V Super Junction Power Transistor | 1.0 USD ($) (Approx.) |
| - | - | Power Transistor | 0.01 USD ($) (Approx.) |
| - | - | Power Transistor Silicon N Channel | 11 USD ($) (Approx.) |
What is the delivery time for power transistor in Beijing?
Transistor IGBT Module
MaterialSemiconductor
DimensionsModule Size
VoltageInput Voltage
CurrentOutput Current
WeightModule Weight
PackagingStandard Packaging
Transistor IGBT Tube Inline
MaterialSilicon
Dimensions10x10x5mm
Voltage600V
Current100A
Power600W
Leads3
Bluetooth Module - Carbide Tungsten 20mm x 15mm | 3.3V Operating Voltage 4dBm Transmit Power 1Mbps Data Rate Integrated Antenna
MaterialCarbide Tungsten
InterfaceController
AntennaIntegrated
ConnectorEdge
PowerHigh transmit
ModulationBluetooth SPF
Power Shielded Wire Wound Inductor
Inductance14µH
MaterialFerrite core
Dimensions5x5x3mm
Operating Temp-40°C to +85°C
Current rating1A
Tolerance±10%
MOSFET Transistor
MaterialSilicon
Dimensions10x5x3mm
Power rating50W
Operating voltage60V
Operating temperature150°C
PackagingSurface mount
Bipolar Darlington Transistor
MaterialMetal
PackageSurface Mount
Dimensions5mm x 5mm
Current Gain10000
Voltage50V
Power0.5W
N-CH 500V 24A 3-Pin MOSFET Transistor
Voltage500V
Current24A
Pins3-Pin
MaterialSilicon
PackageTO-220
FeaturesHigh voltage High current Fast switching Reliable operation Compact size Easy to use Cost effective
Toroid Power Inductor
MaterialFerrite
Dimensions10x10x5mm
Inductance10uH
Current1A
Resistance100mΩ
Temperature125°C
High Frequency Transistor - Silicon SOT-23 | High Power Fast Switching Air Sealed Packaging
MaterialSilicon
FrequencyHigh
PowerHigh
PackagingAir sealed
MountingSurface mount
Case StyleSOT-23
IGBT Chip Transistor Module - Silicon 10x10mm 600V 100A 10kW | High Efficiency Fast Switching Voltage Stable Easy Handling
MaterialSilicon
Dimensions10x10mm
Voltage600V
Current100A
Power10kW
Switching speed1us
DIP8 Induction Cooker Power Switch Mosfet Transistor
PackageDIP8
MaterialPlastic
Dimensions5x5mm
Voltage60V
Current50A
Resistance10mΩ
N-CH 80V 6.5A MOSFET Transistor
MaterialSilicon
Dimensions5x6mm
Voltage80V
Current6.5A
PackageSOT23
Operating temperature-55°C to 150°C
N-CH 30V 1.2A 3-Pin MOSFET Transistor
MaterialSilicon
Voltage30V
Current1.2A
Pins3-Pin
PackageTO-92
FeaturesHigh voltage Fast switching Low RDS(on) Reliable performance Durable design Compact size Cost effective
Ic Tlp5772 Sop6 Application: A C Photovoltaic (Pv) Power Conditioning Systems A C Ac Servos A C Compact Motor Drivers A C Industrial Sewing Machines A C Industrial Inverters
Price: 0.3 USD ($)/Piece
Input5
Output35
Product TypeIC
ApplicationPhotovoltaic (PV) Power Conditioning Systems aEURC/ AC Servos aEURC/ Compact Motor Drivers aEURC/ Industrial Sewing Machines aEURC/ Industrial Inverters
Rated VoltageA+-2.5 A (max) Ampere (A)
Size2.3 (max)
To-220 Power Amplifier NPN Epitaxial Transistors D880
PackageTO-220
TypeNPN
MaterialSilicon
Voltage50V
Current10A
Power50W
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