Switching Transistor In Beijing
(13 products)
Transistor IGBT Module
MaterialSemiconductor
DimensionsModule Size
VoltageInput Voltage
CurrentOutput Current
WeightModule Weight
PackagingStandard Packaging
Transistor IGBT Tube Inline
MaterialSilicon
Dimensions10x10x5mm
Voltage600V
Current100A
Power600W
Leads3
MOSFET Transistor
MaterialSilicon
Dimensions10x5x3mm
Power rating50W
Operating voltage60V
Operating temperature150°C
PackagingSurface mount
Power Transistor
MaterialSilicon
DimensionsTO-3P
Voltage50V
Current10A
Power50W
PackageTO-3
Bipolar Darlington Transistor
MaterialMetal
PackageSurface Mount
Dimensions5mm x 5mm
Current Gain10000
Voltage50V
Power0.5W
High Frequency Transistor
MaterialSilicon
FrequencyHigh
PowerHigh
PackagingAir sealed
MountingSurface mount
Case StyleSOT-23
IGBT Chip Transistor Module
MaterialSilicon
Dimensions10x10mm
Voltage600V
Current100A
Power10kW
Switching speed1us
N-CH 500V 24A 3-Pin MOSFET Transistor
Voltage500V
Current24A
Pins3-Pin
MaterialSilicon
PackageTO-220
FeaturesHigh voltage High current Fast switching Reliable operation Compact size Easy to use Cost effective
2.54mm 8 Pin Dip Switch
Pitch2.54mm
Pins8
MaterialPlastic metal
Dimensions10x20x5mm
Contact resistance10mΩ
Operating temperature0-70°C
N-CH 80V 6.5A MOSFET Transistor
MaterialSilicon
Dimensions5x6mm
Voltage80V
Current6.5A
PackageSOT23
Operating temperature-55°C to 150°C
N-CH 30V 1.2A 3-Pin MOSFET Transistor
MaterialSilicon
Voltage30V
Current1.2A
Pins3-Pin
PackageTO-92
FeaturesHigh voltage Fast switching Low RDS(on) Reliable performance Durable design Compact size Cost effective
Optical Switch
MaterialPlastic Metal
Dimensions10x5x8 mm
Wavelength660nm
Operating voltage5V
Output typeDigital
Response time10μs
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DIP8 Induction Cooker Power Switch Mosfet Transistor
PackageDIP8
MaterialPlastic
Dimensions5x5mm
Voltage60V
Current50A
Resistance10mΩ
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