2sa1075 Power Transistor

Owing to our rich industrial experience and expertise, we are engaged in supplying a superior quality range of 2SA1075 Power Transistor in Shenzhen, Guangdong, China. The 2SA1075/2SA 1076 are silicon PNP general purpose, high power switching transistors fabricated with Fujitsua s unique Ring Emitter Transistor (RET) technology. RET devices are constructed with multiple emitters connected through diffused ballast resistors which provide uniform current density. This structure permits the design of high power transistors with exceptional switching characteristics and frequency response in high current applications.The 2SA1075/2SA 1076 are especially well-suited for High frequency .power amplifiers, Audio power amplifiers, Switching regulators and DC-DC Converters. NPN complements, 2SC2525/2SC 2526, are available.

Features
>With MT-200 package
>Complement to type 2SC2525,2SC2526
>Fast switching speed
>Excellent safe operating area
>High frequency power amplifiers
>Audio povr amplifiers
>Switching regulators
>DC-DC converters