Irfw644b Transistor

Our organization is among the acclaimed names in the industry for supplying a superior quality range of IRFW644B Transistor in Shenzhen, Guangdong, China. These N-Channel enhancement mode power field effect transistors are produced using Fairchilda s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.

Features
>14A, 250V, RDS(on) = 0.28IC @VGS = 10 V
>Low gate charge ( typical 47 nC)
>Low Crss ( typical 30 pF)
>Fast switching
>100% avalanche tested
>Improved dv/dt capability