Fda24n40f Transistor

We are counted among the prominent organizations engaged in supplying a superior quality spectrum of FDA24N40F Transistor in Shenzhen Guangdong China. These N-Channel enhancement mode power field effect transistors are produced using Fairchilda s proprietary planar stripeDMOS technology.This advanced technology has been especially tailored to minimize on-state resistance provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features
-RDS(on) = 0.15? ( Typ.)@ VGS = 10V ID = 11.5A
-Low gate charge (Typ. 46nC)
-Low Crss (Typ.25pF)
-Fast switching
-100% avalanche tested
-Improved dv/dt apability
-RoHS compliant