Irf244 Transistor

We are known in the market amongst reputed and eminent industry for exporting, distributing, trading and supplying a superior range of IRF244 Transistor in Shenzhen, Guangdong, China. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver-tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

2. Features
>14A and 13A, 275V and 250V
>rDS(ON) = 0.28IC and 0.34IC
>Single Pulse Avalanche Energy Rated
>SOA is Power Dissipation Limited
>Nanosecond Switching Speeds
>Linear Transfer Characteristics
>High Input Impedance