Irg71c28u Transistor

Being a client-centric organization, we are engaged in supplying a superior quality spectrum of IRG71C28U Transistor in Shenzhen, Guangdong, China. High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low VCE (on) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Enables Double side cooling and higher current density Eliminates wire bonds and Improves Reliability.

Features
>Designed for Automotive Application**
> Solderable Front Metal
> Low VCE (on) Trench IGBT Technology
> Low Switching Losses
> Maximum Junction Temperature 175 A C
> Short Circuit Rated
> Square RBSOA
> Positive VCE (on) Temperature Coefficient
> Tight Parameter Distribution