Ic Grade Silicon Lapped Wafer
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Product Specifications
| Size | 3"/4"/5"/6" |
| Growth Method | CZ |
| Orientation | <111>/<100> |
| Dopant | P/N type |
| Purity | 11N |
| Resistivity | 0.001 cm |
| Thickness | 200um |
| Features | High Purity, Low Defects, Precise Dimensions, Superior Quality, Versatile Sizes, Customizable Options |
Product Overview
Key Features
Size : 3"/4"/5"/6"
Growth method : CZ
Diameter : 76.2A 0.3mm / 100A 0.4mm / 125A 0.5mm / 150A 0.5mm
Orientation : <111>/<100>
Type : N/P
Dopant : P-type:Boron
N-type:Phos./As./Sb.
Purity : a Y11N(99.999999999%)
Oxygen Content : a 18 New PPMA
Carborn Content : a 1 New PPMA
Dislocation : None
Resistivity : a Y0.001ICA.cm
Thickness : a Y200um, or according to your Requirement
Company Details
Focusing on a customer-centric approach, Shanghai Panmeng Electronic Materials Co., Ltd has a pan-India presence and caters to a huge consumer base throughout the country. Buy Silicon Products in bulk from Shanghai Panmeng Electronic Materials Co., Ltd at Trade India quality-assured products.
Business Type
Exporter
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Seller Details
Shanghai, Shanghai
Name
Sunny Huang
Address
Building A4,No.6638,Beisong Hwy,Songjiang District Shanghai, Shanghai, 201611, China
wafers in Shanghai
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