Rjp30h1dpd Transistor
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Product Specifications
| Material | Silicon |
| Dimensions | Small |
| Power | 30A |
| Voltage | 30V |
| Current | 1A |
| Package | TO-220 |
| Technology | MDmesh |
| Features | High speed, Low voltage, Low current, Efficient, Durable, Reliable |
Product Overview
Key Features
Features
> Trench gate and thin wafer technology (G6H-II series)
> High speed switching: tr = 80 ns typ., tf = 150 ns typ.
> Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
> Low leak current: ICES = 1 A max.
Company Details
Focusing on a customer-centric approach, Utsource1 has a pan-India presence and caters to a huge consumer base throughout the country. Buy Brass Electrical & Electronic Components in bulk from Utsource1 at Trade India quality-assured products.
Business Type
Distributor, Supplier
Establishment
2006
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Seller Details
RatingShenzhen, Guangdong
Name
Mr. Davis
Address
10B2, BLOCK B, WORLD TRADE PLAZA, FUHONGA RD., FUTIAN, Shenzhen, Guangdong, 518033, China
transistor in Shenzhen
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