Rjp30h1dpd Transistor

In order to cater the varied demand of the customers, we are supplying a superior quality spectrum of RJP30H1DPD Transistor in Shenzhen, Guangdong, China. This device is a N-channel Power MOSFETs made using the second generation of MDmesh technology.This revolutionary transistor associates a new vertical structure to the companya s strip layout to yield one of the worlda s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features
> Trench gate and thin wafer technology (G6H-II series)
> High speed switching: tr = 80 ns typ., tf = 150 ns typ.
> Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
> Low leak current: ICES = 1 A max.