Bipolar Transistor In Beijing
(18 products)
Insulated Gate Bipolar Transistor (Igbt)
VCE(sat)Low voltage
Switching lossesReduced
Short circuit10s
Temperature coefficientPositive
InductanceLow
Case materialCeramic
Tianjin R-switch Import & Export Co. Ltd.
Tianjin
Bipolar Darlington Transistor
MaterialMetal
PackageSurface Mount
Dimensions5mm x 5mm
Current Gain10000
Voltage50V
Power0.5W
Transistor IGBT Module
MaterialSemiconductor
DimensionsModule Size
VoltageInput Voltage
CurrentOutput Current
WeightModule Weight
PackagingStandard Packaging
Transistor IGBT Tube Inline
MaterialSilicon
Dimensions10x10x5mm
Voltage600V
Current100A
Power600W
Leads3
Power Transistor
MaterialSilicon
DimensionsTO-3P
Voltage50V
Current10A
Power50W
PackageTO-3
MOSFET Transistor
MaterialSilicon
Dimensions10x5x3mm
Power rating50W
Operating voltage60V
Operating temperature150°C
PackagingSurface mount
N-CH 500V 24A 3-Pin MOSFET Transistor
Voltage500V
Current24A
Pins3-Pin
MaterialSilicon
PackageTO-220
FeaturesHigh voltage High current Fast switching Reliable operation Compact size Easy to use Cost effective
High Frequency Transistor - Silicon SOT-23 | High Power Fast Switching Air Sealed Packaging
MaterialSilicon
FrequencyHigh
PowerHigh
PackagingAir sealed
MountingSurface mount
Case StyleSOT-23
IGBT Chip Transistor Module - Silicon 10x10mm 600V 100A 10kW | High Efficiency Fast Switching Voltage Stable Easy Handling
MaterialSilicon
Dimensions10x10mm
Voltage600V
Current100A
Power10kW
Switching speed1us
N-CH 80V 6.5A MOSFET Transistor
MaterialSilicon
Dimensions5x6mm
Voltage80V
Current6.5A
PackageSOT23
Operating temperature-55°C to 150°C
DIP8 Induction Cooker Power Switch Mosfet Transistor
PackageDIP8
MaterialPlastic
Dimensions5x5mm
Voltage60V
Current50A
Resistance10mΩ
N-CH 30V 1.2A 3-Pin MOSFET Transistor
MaterialSilicon
Voltage30V
Current1.2A
Pins3-Pin
PackageTO-92
FeaturesHigh voltage Fast switching Low RDS(on) Reliable performance Durable design Compact size Cost effective
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STMicroelectronics TIP3055 Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single
Transistor TypeBipolar (BJT)
Voltage60V
Current15A
PackageTO-247
MaterialSilicon
FeaturesHigh power High current NPN Transistor Robust design Reliable performance Cost effective Easy to use
Richard Electronics
Shenzhen
Texas Instruments ULN2003AN Discrete Semiconductor Products Transistors - Bipolar (BJT) - Arrays
MaterialPlastic
DimensionsDIP16
Number of Transistors7
Current500mA
Voltage50V
PackageDIP
Richard Electronics
Shenzhen
ON Semiconductor 2N7002LT1G Discrete Semiconductor Products Transistors - FETs MOSFETs - Single
MaterialSilicon
DimensionsSOT-23
Voltage60V
Current0.115A
Power0.5W
Operating temperature-55°C to 150°C
Richard Electronics
Shenzhen
ON Semiconductor MMBT3906 - Silicon 3x2x1mm PNP 40V 0.2A SOT-23 Reliable Low Current Transistor
PackageSOT-23
TypePNP
Voltage40V
Current0.2A
MaterialSilicon
Dimensions3x2x1mm
Richard Electronics
Shenzhen
ON Semiconductor FQP30N06L - Silicon MOSFET N-CH 60V 32A TO-220 Low RDS(on) Fast Switching Durable Reliable
MaterialSilicon
PackageTO-220
Voltage60V
Current32A
Power192W
Resistance0.025 ohms
Richard Electronics
Shenzhen
Brown & Black On Semiconductor Tip127 Discrete Semiconductor Products Transistors - Bipolar (Bjt) - Single
PackageTO-220AB
Voltage100V
Current5A
TypePNP
MaterialSilicon
Leads3
Richard Electronics
Shenzhen
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