VCE(sat)Low voltage
Switching lossesReduced
Short circuit10s
Temperature coefficientPositive
InductanceLow
Case materialCeramic
MaterialMetal
PackageSurface Mount
Dimensions5mm x 5mm
Current Gain10000
Voltage50V
Power0.5W
MaterialSemiconductor
DimensionsModule Size
VoltageInput Voltage
CurrentOutput Current
WeightModule Weight
PackagingStandard Packaging
MaterialSilicon
Dimensions10x10x5mm
Voltage600V
Current100A
Power600W
Leads3
MaterialSilicon
DimensionsTO-3P
Voltage50V
Current10A
Power50W
PackageTO-3
MaterialSilicon
Dimensions10x5x3mm
Power rating50W
Operating voltage60V
Operating temperature150°C
PackagingSurface mount
MaterialSilicon
FrequencyHigh
PowerHigh
PackagingAir sealed
MountingSurface mount
Case StyleSOT-23
MaterialSilicon
Dimensions10x10mm
Voltage600V
Current100A
Power10kW
Switching speed1us
Voltage500V
Current24A
Pins3-Pin
MaterialSilicon
PackageTO-220
FeaturesHigh voltage High current Fast switching Reliable operation Compact size Easy to use Cost effective
MaterialSilicon
Dimensions5x6mm
Voltage80V
Current6.5A
PackageSOT23
Operating temperature-55°C to 150°C
PackageDIP8
MaterialPlastic
Dimensions5x5mm
Voltage60V
Current50A
Resistance10mΩ
MaterialSilicon
Voltage30V
Current1.2A
Pins3-Pin
PackageTO-92
FeaturesHigh voltage Fast switching Low RDS(on) Reliable performance Durable design Compact size Cost effective
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PackageTO-220AB
Voltage100V
Current5A
TypePNP
MaterialSilicon
Leads3
MaterialPlastic
DimensionsDIP16
Number of Transistors7
Current500mA
Voltage50V
PackageDIP
MaterialSilicon
DimensionsSOT-23
Voltage60V
Current0.115A
Power0.5W
Operating temperature-55°C to 150°C
PackageSOT-23
TypePNP
Voltage40V
Current0.2A
MaterialSilicon
Dimensions3x2x1mm
MaterialSilicon
PackageTO-220
Voltage60V
Current32A
Power192W
Resistance0.025 ohms
Transistor TypeBipolar (BJT)
Voltage60V
Current15A
PackageTO-247
MaterialSilicon
FeaturesHigh power High current NPN Transistor Robust design Reliable performance Cost effective Easy to use
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