Ge Wafer

Silicon Epi Wafer

Ge Wafer

Silicon Wafer - CZ/MCZ/FZ/NTD Substrate, Diameter 2"~8", Orientation <111>, <100>, <110>, Resistivity 0.001~20,000 ohm-cm, Surface As Cut, Lapped, Etched, Polished

Silicon Solar Wafer

SiC Wafer

GaAs Wafer - 2"~6" Diameter, <100> Orientation, N/Si or None Dopant, Polished Surface | Various Orientations, Dopant Options, Competitive Prices

Diffusion Wafers - Silicon, 3-8 Inch, <150µm Thickness, 0.005-1000 ohm-cm Resistivity | Single/Multiple Epi Layers, N/N+, P/P+, N/P+, P/N+, Precise Doping, Uniform Thickness

Sapphire Wafer - 2" to 6" Diameter, C-Plane Orientation <0001>, EPD <1000> for LED Applications, Precision Surface Finishing