Eas2100v Discrete Test System

The EAS2100V Discrete Test System to guarantee the energy for switching during the Inductive load and performs ruggedness testing of power MOSFETs and IGBTs. The EAS2X00V is the capability of P- and N-Channel MOSFETs and IGBTs by stressing them to controlled energy levels. This is accomplished by the devices driving an unclamped inductive load. The Inductive load can programmable from 10uH to 79.99mH. Automation of current ID detection using a high speed ID detection function. Device currents add constantly monitored and testing is terminated if currents exceed programmable levels or if the currents fail to reach the programmable levels in a specified time.