Sic Schottky Diodes - Silicon Carbide, To-220/to-247/smd, Black Body, 1200v 20a, Low Forward Voltage Drop, Fast Switching

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Product Specifications

Interface	2 terminal diode connection
Power Source	External circuit
Input	Current/Voltage as per diode configuration
Power Supply	DC/AC circuit compatible
Components	Silicon Carbide semi-conductor diode
Thermal Conductivity	Superior; SiC enables better heat dissipation than silicon
Operating Temperature	-55AdegC to +175AdegC
Features	High voltage tolerance, low switching loss, high temperature stability, ruggedness
Response Time	Fast; Reverse recovery time < 20 ns
Output	Rectified DC
Usage	Power conversion, switching power supply, motor drives, photovoltaic inverters, fast rectification
Product Type	SiC Schottky Diode
Application	Industrial electronics, renewable energy, automotive, power management
Rated Voltage	Up to 1200 V
Supply Voltage	Up to 1200 V
Size	TO-220, TO-247, SMD packages available
Dimension (LWH)	Varies by package; typical TO-220: 10.0 x 4.5 x 15.0 mm
Function	High-efficiency rectification, fast switching, low forward voltage drop
Color	Black body (standard semiconductor package)
Weight	Approx. 0.8 g (varies by package)
Current Rating	Up to 20 A
Capacity	Rated for continuous current up to 20 A
Thickness	0.3 mm (die), varies by package
Frequency	Switching operation up to several hundred kHz