Hat2215r Transistor

We are trusted name engaged in supplying a superior quality range of HAT2215R Transistor in Shenzhen, Guangdong, China. Our skilled vendors make use of top quality raw and updatedA technology in order to perfectly manufacture this product. Furthermore, a stringent check is precisely conducted on our whole gamut in order to avoid any flaw and make sure its quality.

HAT2215R, HAT2215RJ Silicon N Channel Power MOS FET High Speed Power Switching
1. PW a 10 I s, duty cycle a 1 %
2. Value at Tch = 25A C, Rg a Y 50IC
3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PWa 10 s
4. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PWa 10 s

2. Features
>Low on-resistance
>Capable of 4.5 V gate drive
>High density mounting