Fqpf12n60c

To cater the variegated demands of our precious clients, our organization known as a leading Supplier of FQPF12N60C in Shenzhen, Guangdong, China.
1. Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilda s proprietary,planar stripe,
DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance,and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on
half bridge topology.
2. Features
>12A, 600V, RDS(on) = VGS= 10 V
> Low gate charge ( typical 48 nC)
> Low Crss ( typical 21 pF)
> Fast switching
>100% avalanche tested
> Improved dv/dt capability