Fgl60n100bntd Fairchild Semiconductor

Our company has gained name and fame in field of distributing, trading, exporting and supplying a superior quality range of FGL60N100BNTD Fairchild Semiconductor in Shenzhen, Guangdong, China. These products have been designed and developed using a high quality of metals and we ensure that they have been manufactured keeping in mind the international quality standards set by the industry and they are exported to the customers at very reasonable rates in the market.

Manufacturer Part #: FGL60N100BNTD
Manufacturer: Fairchild Semiconductor
Description:
IGBT Transistors HIGH POWER
Manufacturer:Fairchild Semiconductor
RoHS:RoHS Compliant Details
Configuration:Single
Collector- Emitter Voltage VCEO Max:1000 V
Collector-Emitter Saturation Voltage:1.5 V
Maximum Gate Emitter Voltage:+/- 25 V
Continuous Collector Current at 25 C:60 A
Gate-Emitter Leakage Current:+/- 500 nA
Pd - Power Dissipation:180 W
Mounting Style:Through Hole
Package / Case:TO-264-3
Maximum Operating Temperature:+ 150 C
Packaging:Tube
Brand:Fairchild Semiconductor
Continuous Collector Current:60 A
Continuous Collector Current Ic Max:60 A
Height:26 mm
Length:20 mm
Minimum Operating Temperature:- 55 C
Series:FGL60N100BNTD
Factory Pack Quantity:375
Width:5 mm
Part # Aliases:FGL60N100BNTD_NL
Unit Weight:0.238311 oz