MaterialKapton
Thickness0.05mm
Size4.5*4.5mm - 24*24mm
AdhesiveSilicone
ColorGolden
Temperature280°C
Price: 16 USD ($)/Piece
MOQ100 Piece/Pieces
Shelf Life6 Months
Storage Temperature25 Celsius (oC)
Hardness42A
Adhesive TypeOther
FeaturesHigh Quality
Applicationbonding and protecting semiconductor devices and electronic components
Trusted Seller1 Years
MaterialSilicon
Dimensions10x10mm
Pins28
OperatingTemp0-70°C
Voltage5V
Current100mA
MaterialSilicon
Dimensions10x10mm
Pins68
Voltage5V
OperatingTemp0-70C
PackageDIP
MaterialSemiconductor
Temperature260C
PackagingBox
Quantity3000
MS Level1
FeaturesHigh quality Durable Customizable Reliable Cost effective
Product DescriptionOwing to the expertise of our skilled and experienced professionals we are able to manufacture an extensive range of TYN610 Semiconductors to our customers. P/N JJ Model IT(RMS) VDRM/VRRM IGT Package TYN610 JCT610 10A 600V/800V 10mA TO-220B Voltage 600V/800V for option. Package: TO-220B/TO-251/ TO-
Price: 17 USD ($)/Piece
MOQ1000 Piece/Pieces
Product TypeSemiconductors Product Diode Chips
ApplicationOther
SizeMultiple
Usage & ApplicationsDiode chip
FeaturesLong Working Life
Trusted Seller1 Years
MaterialStainless Steel
ProcessCNC Machining
Tolerance0.001~0.003mm
Surface TreatmentAnodizing
CertificationISO9001:2008 ROHS
LengthVaried
ManufacturerSAMSUNG
Part NumberK9F4G08UOM-PIBO
PackageTSOP48
Quantity1200pcs
Lead Time5-7 days
Data Code0933
FET TypeN-Channel
Vdss150V
Id4.1A
Rds On67 mOhm
Qg13nC
Vgs20V
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| Company Name | Currency | Product Name | Price |
|---|---|---|---|
| - | - | EUBO Room Temperature Curing Silicone AdhesiveTwo-Component Sealant for Semiconductor Devices and Electronic Components | 16 USD ($) (Approx.) |
| - | - | Semiconductors | 0.12 USD ($) (Approx.) |
| - | - | Semiconductors Product Diode Chips | 17 USD ($) (Approx.) |
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PackageTO-220
Voltage600/800V
Current4A
MaterialSemiconductor
MountingThrough-hole
Quadrants4
MaterialSilicon
PackageTO-220F
Voltage600V/800V
Current20A
IGT4-10mA
FeaturesHigh power Fast switching Durable Reliable Efficient Cost-effective
PackageTO-220F
Voltage650V/800V
Current12A
IGT2-5mA
MaterialSemiconductor
IsolationIsolated
PackageTO-220C
Current12A
Voltage600V/800V
MaterialSemiconductor
MountingThrough-hole
TerminationLeads
PackageTO-220A
Voltage600V/800V
Current8A
IGTTW/SW/CW/BW/C/B
Dv/dtHigh
MaterialSemiconductor
Voltage600V/800V
Current20A
PackageTO-220B
MaterialSemiconductor
IGT25mA
Dv/dtHigh
PackageTO-220F
IT(RMS)12A
VDRM/VRRM1000V
IGT200uA
MaterialSemiconductor
P/NJX075F
PackageTO-220C
Voltage650V/800V
Current12A
IGT2-4mA
MaterialSemiconductor
MountingThrough-hole
PackageTO-3P
Voltage600V/800V/1200V
Current25A
IGTCW/BW
MaterialSemiconductor
Dv/dtHigh
PackageTO-126
Current4A
Voltage600V
MaterialSemiconductor
DimensionsSmall
MountingThrough-hole
Current12A
Voltage600/800V
PackageTO-220B
MaterialSemiconductor
IGT15mA
FeaturesHigh dv/dt rate High reliability Cost advantage False trigger immunity 12A current 600/800V voltage TO-220B package
PackageTO-220A
Voltage600V/800V/1200V
Current16A
IGTTW/SW/CW/BW/C/B
MaterialSemiconductor
MountingThrough-hole
IT(RMS)25A
VDRM/VRRM1200V
IGT40mA
PackageTO-220A
MaterialSemiconductor
FeaturesHigh dv/dt rate High immunity 25A 1200V TO-220A package Reliable performance Cost effective
MaterialSemiconductor
PackageTO-220
Voltage600V/800V/1200V
Current25A
IGTCW/BW
Dv/dtHigh
MaterialSilicon
DimensionsVaried
Voltage1200V
Current100A
PackagingBulk
MountingThreaded
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