AdhesiveSilicone
ColorGolden
FeaturesHigh Temperature Low Residue Easy Peel Dust Protection Scratch Protection Sensor Protection High Adhesion Customizable Size
MaterialKapton
Size4.5*4.5mm - 24*24mm
Temperature280°C
Price: 16 USD ($)/Piece
MOQ100 Piece/Pieces
Shelf Life6 Months
Hardness42A
Storage Temperature25 Celsius (oC)
FeaturesHigh Quality
Adhesive TypeOther
Applicationbonding and protecting semiconductor devices and electronic components
Trusted Seller2 Years
Current100mA
Dimensions10x10mm
FeaturesLow loss Durable Eco-friendly Efficient Compatible Cost-effective Long life Weather resistant
MaterialSilicon
OperatingTemp0-70°C
PackagingSOP
Dimensions10x10mm
FeaturesHigh performance Reliable operation Compact design Cost effective Versatile use Long lifespan Easy integration
MaterialSilicon
OperatingTemp0-70C
PackageDIP
Pins68
FeaturesHigh quality Durable Customizable Reliable Cost effective
MS Level1
MaterialSemiconductor
PackagingBox
Quantity3000
Temperature260C
Current8A
Dv/dtHigh
FeaturesHigh voltage Fast switching Reliable operation Cost effective Durable design Easy installation High power
IGTD/E/F
MaterialSemiconductor
PackageTO-220C
Price: 17 USD ($)/Piece
MOQ1000 Piece/Pieces
Product TypeSemiconductors Product Diode Chips
ApplicationOther
SizeMultiple
Usage & ApplicationsDiode chip
FeaturesLong Working Life
Current7A
FeaturesHigh Power High Current High Voltage Reliable Durable Efficient Versatile
Gain10- (4A/5V)
MaterialSemiconductor
PackageTO-220
Power40W
CertificationISO9001:2008 ROHS
DiameterVaried
FeaturesHigh Precision Customizable Durable Reliable Versatile Precise Machining Various Finishes Tight Tolerance
LengthVaried
MaterialStainless Steel
ProcessCNC Machining
Data Code0933
FeaturesHigh capacity Fast speed Reliable memory Durable Cost-effective Easy to use
Lead Time5-7 days
ManufacturerSAMSUNG
MaterialSemiconductor
PackageTSOP48
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| Company Name | Currency | Product Name | Price |
|---|---|---|---|
| - | - | EUBO Room Temperature Curing Silicone AdhesiveTwo-Component Sealant for Semiconductor Devices and Electronic Components | 16 USD ($) (Approx.) |
| - | - | Semiconductors | 0.12 USD ($) (Approx.) |
| - | - | Semiconductors Product Diode Chips | 17 USD ($) (Approx.) |
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FET TypeN-Channel
FeaturesHigh power Low Rds Fast switching Surface mount Reliable
Id4.1A
Package8-SOIC
Qg13nC
Rds On67 mOhm
Current16A
FeaturesHigh dv/dt High immunity High reliability Best price 16A current 600/800V TO-220B package
IGT15mA
MaterialSemiconductor
PackageTO-220B
Voltage600/800V
Current4A
DimensionsSmall
FeaturesHigh reliability Low cost Fast switching Durable design Low power Compact size Easy integration
MaterialSemiconductor
MountingThrough-hole
Operating TemperatureHigh
Current12A
FeaturesHigh dv/dt rate High reliability Cost advantage False trigger immunity 12A current 600/800V voltage TO-220B package
IGT15mA
MaterialSemiconductor
PackageTO-220B
Voltage600/800V
Current16A
FeaturesHigh dv/dt rate False trigger immunity High power handling Reliable performance TO-220 package Cost effective Wide voltage range Multiple options
IGTTW/SW/CW/BW/C/B
MaterialSemiconductor
MountingThrough-hole
PackageTO-220A
Current12A
FeaturesHigh dv/dt High immunity Reliable performance Durable design Cost effective Easy integration Long lifespan
MaterialSemiconductor
MountingThrough-hole
PackageTO-220C
TerminationLeads
Current20A
Dv/dtHigh
FeaturesHigh voltage High current Fast switching Durable Reliable Cost effective TO-220 package
IGT25mA
MaterialSemiconductor
PackageTO-220B
FeaturesHigh dv/dt High immunity Cost advantage Quality control High power Reliable Durable Efficient
IGT200uA
IT(RMS)12A
MaterialSemiconductor
P/NJX075F
PackageTO-220F
Current4A
FeaturesHigh voltage Low current Durable Reliable Cost effective Efficient
MaterialSemiconductor
MountingThrough-hole
PackageTO-220
Quadrants4
Current10A
Dv/dt rateHigh
FeaturesHigh voltage Low current Fast switching Durable design Cost effective High quality Reliable performance
MaterialSemiconductor
PackageTO-220B
Voltage600V/800V
Current12A
FeaturesHigh dv/dt High immunity Cost advantage Better reliability TO-220A package Isolated package Multiple voltages Multiple IGTs
IGTTW/SW/CW/BW/C/B
IsolationIsolated
MaterialSemiconductor
PackageTO-220A
Current8A
Dv/dtHigh
FeaturesHigh voltage High surge Reliable design Cost effective TO-220A package Isolated package
IGTTW/SW/CW/BW/C/B
MaterialSemiconductor
PackageTO-220A
Current4A
DimensionsTO-126 size
FeaturesHigh dv/dt rate High immunity Reliable performance Long lifespan Multiple packages Cost effective Easy integration
IGT200uA
MaterialSilicon
MountingThrough-hole
Current12A
FeaturesHigh dv/dt rate High surge handling Reliable performance Cost effective Versatile options Robust design Long lifespan
IGT2-4mA
MaterialSemiconductor
MountingThrough-hole
PackageTO-220C
Current100A
DimensionsVaried
FeaturesHigh durability Cost effective Reliable performance Superior quality Long lifespan
MaterialSilicon
MountingThreaded
PackagingBulk
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