MaterialKapton
Thickness0.05mm
Size4.5*4.5mm - 24*24mm
AdhesiveSilicone
ColorGolden
Temperature280°C
Price: 16 USD ($)/Piece
MOQ100 Piece/Pieces
Adhesive TypeOther
FeaturesHigh Quality
Hardness42A
Shelf Life6 Months
Storage Temperature25 Celsius (oC)
Applicationbonding and protecting semiconductor devices and electronic components
Trusted Seller2 Years
MaterialSilicon
Dimensions10x10mm
Pins28
OperatingTemp0-70°C
Voltage5V
Current100mA
MaterialSilicon
Dimensions10x10mm
Pins68
Voltage5V
OperatingTemp0-70C
PackageDIP
MaterialSemiconductor
Temperature260C
PackagingBox
Quantity3000
MS Level1
FeaturesHigh quality, Durable, Customizable, Reliable, Cost effective
PackageTO-220C
Current12A
Voltage600V/800V
MaterialSemiconductor
MountingThrough-hole
TerminationLeads
Price: 17 USD ($)/Piece
MOQ1000 Piece/Pieces
Product TypeSemiconductors Product Diode Chips
ApplicationOther
SizeMultiple
Usage & ApplicationsDiode chip
FeaturesLong Working Life
2 Years
Power40W
Current3A
VCBO900V
VCEO800V
HFE10-5V
PackageTO-220Fa
MaterialStainless Steel
ProcessCNC Machining
Tolerance0.001~0.003mm
Surface TreatmentAnodizing
CertificationISO9001:2008, ROHS
LengthVaried
ManufacturerSAMSUNG
Part NumberK9F4G08UOM-PIBO
PackageTSOP48
Quantity1200pcs
Lead Time5-7 days
Data Code0933
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| Company Name | Currency | Product Name | Price |
|---|---|---|---|
| - | - | EUBO Room Temperature Curing Silicone AdhesiveTwo-Component Sealant for Semiconductor Devices and Electronic Components | 16 USD ($) (Approx.) |
| - | - | Semiconductors | 0.12 USD ($) (Approx.) |
| - | - | Semiconductors Product Diode Chips | 17 USD ($) (Approx.) |
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FET TypeN-Channel
Vdss150V
Id4.1A
Rds On67 mOhm
Qg13nC
Vgs20V
Voltage600V/800V
Current20A
PackageTO-220B
MaterialSemiconductor
IGT25mA
Dv/dtHigh
PackageTO-220A
Voltage600V/800V/1200V
Current16A
IGTTW/SW/CW/BW/C/B
MaterialSemiconductor
MountingThrough-hole
PackageTO-220
Voltage600/800V
Current4A
MaterialSemiconductor
MountingThrough-hole
Quadrants4
PackageTO-220C
Voltage600V/800V
Current8A
IGTD/E/F
MaterialSemiconductor
Dv/dtHigh
Voltage600V/800V
Current10A
PackageTO-220B
MaterialSemiconductor
Dv/dt rateHigh
FeaturesHigh voltage, Low current, Fast switching, Durable design, Cost effective, High quality, Reliable performance
PackageTO-126
Current4A
Voltage600V
MaterialSemiconductor
DimensionsSmall
MountingThrough-hole
PackageTO-220A
Voltage600V/800V/1200V
Current12A
IGTTW/SW/CW/BW/C/B
MaterialSemiconductor
IsolationIsolated
PackageTO-220A
Voltage600V/800V
Current8A
IGTTW/SW/CW/BW/C/B
Dv/dtHigh
MaterialSemiconductor
IT(RMS)25A
VDRM/VRRM1200V
IGT40mA
PackageTO-220A
MaterialSemiconductor
FeaturesHigh dv/dt rate, High immunity, 25A, 1200V, TO-220A package, Reliable performance, Cost effective
PackageTO-220F
Voltage650V/800V
Current12A
IGT2-5mA
MaterialSemiconductor
IsolationIsolated
PackageTO-3P
Voltage600V/800V/1200V
Current25A
IGTCW/BW
MaterialSemiconductor
Dv/dtHigh
PackageTO-126
VDRM/VRRM600V
IGT200uA
Current4A
MaterialSilicon
DimensionsTO-126 size
PackageTO-220F
IT(RMS)12A
VDRM/VRRM1000V
IGT200uA
MaterialSemiconductor
P/NJX075F
MaterialSilicon
DimensionsVaried
Voltage1200V
Current100A
PackagingBulk
MountingThreaded
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