Price: 16 USD ($)/Piece
MOQ100 Piece/Pieces
Shelf Life6 Months
Hardness42A
Adhesive TypeOther
FeaturesHigh Quality
Storage Temperature25 Celsius (oC)
Applicationbonding and protecting semiconductor devices and electronic components
Trusted Seller2 Years
Current100mA
Dimensions10x10mm
FeaturesLow loss Durable Eco-friendly Efficient Compatible Cost-effective Long life Weather resistant
MaterialSilicon
OperatingTemp0-70°C
PackagingSOP
Dimensions10x10mm
FeaturesHigh performance Reliable operation Compact design Cost effective Versatile use Long lifespan Easy integration
MaterialSilicon
OperatingTemp0-70C
PackageDIP
Pins68
FeaturesHigh quality Durable Customizable Reliable Cost effective
MS Level1
MaterialSemiconductor
PackagingBox
Quantity3000
Temperature260C
AdhesiveSilicone
ColorGolden
FeaturesHigh Temperature Low Residue Easy Peel Dust Protection Scratch Protection Sensor Protection High Adhesion Customizable Size
MaterialKapton
Size4.5*4.5mm - 24*24mm
Temperature280°C
FeaturesHigh dv/dt High immunity Cost advantage Quality control High power Reliable Durable Efficient
IGT200uA
IT(RMS)12A
MaterialSemiconductor
P/NJX075F
PackageTO-220F
CertificationISO9001:2008 ROHS
DiameterVaried
FeaturesHigh Precision Customizable Durable Reliable Versatile Precise Machining Various Finishes Tight Tolerance
LengthVaried
MaterialStainless Steel
ProcessCNC Machining
Price: 17 USD ($)/Piece
MOQ1000 Piece/Pieces
Product TypeSemiconductors Product Diode Chips
ApplicationOther
SizeMultiple
Usage & ApplicationsDiode chip
FeaturesLong Working Life
Data Code0933
FeaturesHigh capacity Fast speed Reliable memory Durable Cost-effective Easy to use
Lead Time5-7 days
ManufacturerSAMSUNG
MaterialSemiconductor
PackageTSOP48
FET TypeN-Channel
FeaturesHigh power Low Rds Fast switching Surface mount Reliable
Id4.1A
Package8-SOIC
Qg13nC
Rds On67 mOhm
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| Company Name | Currency | Product Name | Price |
|---|---|---|---|
| - | - | EUBO Room Temperature Curing Silicone AdhesiveTwo-Component Sealant for Semiconductor Devices and Electronic Components | 16 USD ($) (Approx.) |
| - | - | Semiconductors | 0.12 USD ($) (Approx.) |
| - | - | Semiconductors Product Diode Chips | 17 USD ($) (Approx.) |
What is the delivery time for semiconductor components in Chaozhou?
How many trusted sellers are available for Semiconductor Components in Chaozhou?
Current8A
Dv/dtHigh
FeaturesHigh voltage Fast switching Reliable operation Cost effective Durable design Easy installation High power
IGTD/E/F
MaterialSemiconductor
PackageTO-220C
Current16A
FeaturesHigh dv/dt High immunity High reliability Best price 16A current 600/800V TO-220B package
IGT15mA
MaterialSemiconductor
PackageTO-220B
Voltage600/800V
Current4A
FeaturesHigh voltage Low current Durable Reliable Cost effective Efficient
MaterialSemiconductor
MountingThrough-hole
PackageTO-220
Quadrants4
Current4A
DimensionsSmall
FeaturesHigh reliability Low cost Fast switching Durable design Low power Compact size Easy integration
MaterialSemiconductor
MountingThrough-hole
Operating TemperatureHigh
Current12A
FeaturesHigh dv/dt rate High reliability Cost advantage False trigger immunity 12A current 600/800V voltage TO-220B package
IGT15mA
MaterialSemiconductor
PackageTO-220B
Voltage600/800V
Current16A
FeaturesHigh dv/dt rate False trigger immunity High power handling Reliable performance TO-220 package Cost effective Wide voltage range Multiple options
IGTTW/SW/CW/BW/C/B
MaterialSemiconductor
MountingThrough-hole
PackageTO-220A
Current12A
FeaturesHigh dv/dt High immunity Reliable performance Durable design Cost effective Easy integration Long lifespan
MaterialSemiconductor
MountingThrough-hole
PackageTO-220C
TerminationLeads
Current20A
Dv/dtHigh
FeaturesHigh voltage High current Fast switching Durable Reliable Cost effective TO-220 package
IGT25mA
MaterialSemiconductor
PackageTO-220B
Current8A
Dv/dtHigh
FeaturesHigh voltage High surge Reliable design Cost effective TO-220A package Isolated package
IGTTW/SW/CW/BW/C/B
MaterialSemiconductor
PackageTO-220A
Current20A
FeaturesHigh power Fast switching Durable Reliable Efficient Cost-effective
IGT4-10mA
MaterialSilicon
PackageTO-220F
Voltage600V/800V
Current4A
DimensionsTO-126 size
FeaturesHigh dv/dt rate High immunity Reliable performance Long lifespan Multiple packages Cost effective Easy integration
IGT200uA
MaterialSilicon
MountingThrough-hole
Current25A
Dv/dtHigh
FeaturesHigh voltage Fast switching Durable Reliable Efficient Compact size Cost-effective
IGTCW/BW
ImmunityHigh
MaterialSemiconductor
Current12A
FeaturesHigh dv/dt rate High surge handling Reliable performance Cost effective Versatile options Robust design Long lifespan
IGT2-4mA
MaterialSemiconductor
MountingThrough-hole
PackageTO-220C
Current2A
Dv/dtHigh
FeaturesHigh dv/dt Long life High immunity 2A current 600V voltage TO-126 package
IGT200uA
MaterialSemiconductor
PackageTO-126
Current100A
DimensionsVaried
FeaturesHigh durability Cost effective Reliable performance Superior quality Long lifespan
MaterialSilicon
MountingThreaded
PackagingBulk
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