Power Diode In Wanchai
(84 products)
IGBT Power Module - Black Standard Size | High Frequency Operation Low Saturation Voltage Three-Terminal Device
Current Rating100A
Dimensions50mm x 50mm
FeaturesHigh Power Low Loss Fast Switching High Efficiency Reliable Performance
MaterialSilicon
MountingThrough Hole
Operating Temperature-40°C to +150°C
Elevator Spare Parts - IGBT Half-Bridge Configuration Super-Fast Recovery Diode Optimal Device Characteristics Low Saturation Voltage Over Current Limiting Function
Current50A
DimensionsCheck Image
FeaturesHigh Power Fast Switching Reliable Durable Efficient Compact Easy Install
MaterialIGBT Module
MountingThrough Hole
PackageISOTOP
SCR IGBT Module Thyristor Diode CS241210 - IGBT Module High Power Fast Switching Reliable Performance
BrandPRX
ConditionNew
FeaturesHigh power Fast switching Reliable performance Compact design Original quality Long lifespan Easy installation Cost-effective
Model NumberCS241210
OriginJapan
PackageModule
Rectifier Diodes - Silicon Module Packaging | 90-Day Warranty High Current Capacity Designed for IGBT Power Supply Applications
Price: 35 USD ($)/Piece
MOQ3 Piece/Pieces
Usageups
Power Supplyigbt module
ApplicationIndustrial
ColorBLACK
Warranty90 days
IGBT Power Transistor
Current100A
Dimensions70x50x30mm
FeaturesHigh voltage Low resistance Fast switching Easy drive High current Simple drive
MaterialSilicon
MountingBolt-on
Power10kW
Intelligent Power Module - Plastic Metal 6x4x2cm 600V 100A | High Efficiency Fast Switching Overcurrent Protection Compact Design
Current100A
Dimensions6cm x 4cm x 2cm
FeaturesHigh efficiency Fast switching Overcurrent protection Compact design Easy installation Reliable performance Long lifespan
MaterialPlastic Metal
MountingScrew
Operating temperature0-60C
RF Power Module QM75TX-H - 75x50x25mm Black 70% Efficiency | High Power Rugged Design 50-100MHz Frequency Range
Dimensions75x50x25mm
Dominant ColorBlack
Efficiency70%
FeaturesHigh power Rugged design Compact size Versatile use Durable module
Frequency Range50-100MHz
Input Voltage24V
Driver Modules Transistor Power IGBT - Plastic Metal 70x50x20mm 1200V 100A Fast Switching Over Current Protection
Current100A
Dimensions70x50x20mm
FeaturesHigh Power Fast Switching Over Current Protection Compact Design Easy Installation Reliable Operation Long Lifespan
MaterialPlastic Metal
MountingScrew
PackageTO-247
TOSHIBA IC Transistor MG30G6El2 - Silicon High Voltage High Power | Fast Switching Over Current Protection High Frequency Operation
CurrentHigh
FeaturesHigh Power Fast Switching Over Current Protection Low Voltage High Frequency Reliable Operation Compact Design
FrequencyHigh
MaterialSilicon
PackageTOSHIBA
PowerHigh
FUJI IGBT Transistor 7MBP75JB-060 - Semiconductor Compact Size High Power | Fast Switching Low Voltage Over Current Limiting
CurrentRated current
DimensionsModule size
FeaturesHigh power Fast switching Compact design High efficiency Rugged structure Low voltage Over current limiting Easy assembly
MaterialSemiconductor
PowerHigh Power
Switching SpeedHigh frequency
FUJI RF Transistor - Semiconductor 5-14 GHz | High Power Low Voltage Rugged Short Circuit Withstand Over Current Limiting
CurrentHigh
FeaturesHigh power Low voltage High frequency Rugged structure High durability Excellent capacity Short circuit Over current
Frequency5-14 GHz
MaterialSemiconductor
PowerHigh
TerminalsThree
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Thyristor Diode Modules - Silicon 1200V to 4400V | Up to 1070A Current Rating Compact Design with Sturdy Pin Terminals High Performance and Reliability
Current ratingUp to 1070A
FeaturesHigh performance Compact design Reliable Cost effective Versatile Durable Easy integration
MaterialSoldered
MountingPCB
TopologySingle/dual
Voltage range1200V-4400V
Thyristor Power Controller - 110-690V 16-4200A | Rugged Design for Industrial Furnace and Plastic Processing Applications Single/Three Phase Operation
Current Rating16A-4200A
FeaturesPower Control Voltage Control Rugged Design Precise Control Industrial Use
MaterialMetal/Plastic
MountingBase Mount
PhasesSingle/Three
TypeThyristor
IGBT Power Modules
ConfigurationHalf-Bridge
CurrentVariable
DimensionsModule Specific
FeaturesHigh Power Fast Switching Low Voltage Over Current Protection Easy Assembly Reliable Operation High Efficiency Compact Design
MaterialSemiconductor
PackagingTray
Fuji Power Module - Black Half-Bridge IGBT 150A 1500V High Efficiency Durable Compact
Current Rating150A
Dominant ColorBlack
FeaturesHigh Power Efficient Reliable Durable Compact Versatile
IGBT Type7MBP150RA-060
Module TypeHalf-Bridge
MountingBolt-on
IGBT power semiconductors
Current100A
Dimensions70mm x 50mm
FeaturesHigh Power Fast Switching Low Losses Durable Design Reliable Operation Easy Integration
MaterialSilicon Carbide
Operating Temperature150°C
PackageTO-247
infineon IGBT power module
Current75A
Dimensions75x120mm
FeaturesHigh efficiency Fast switching Compact design Reliable operation Overcurrent protection Easy integration
MaterialSilicon
MountingSurface mount
PackageHalf-bridge
SEMIKRON IGBT Power Module - Silicon Carbide 50x50x25 mm 1200V 50A | Fast Switching Overcurrent Protection Low Voltage Drop
Current50A
Dimensions50x50x25 mm
FeaturesHigh efficiency Fast switching Overcurrent protection Compact design Reliable operation Easy installation Low voltage drop Long lifespan
MaterialSilicon carbide
MountingScrew
Temperature150°C
PM9036 IGBT Module - 600V 100A Green SMD High Power Fast Switching Compact Design
Current Rating100A
Dominant ColorGreen
FeaturesHigh Power Fast Switching Compact Design Reliable Operation Easy Installation
Operating Temperature150°C
Package TypeSMD
Product TypeIGBT Module
Darlington(GTR) Module ETN35-030 - 3000V 200W Voltage Regulator Telecom Grade Reliable Power Regulation
BrandFUJI
Dissipation Power200W
FeaturesHigh Voltage Power Regulation Reliable Operation Compact Design Long Life Telecom Grade
Model NumberETN35-030
PackageMODULE
Supply Voltage3000V
ABB IGBT Modules - Plastic Copper Baseplate Black | High Power Low Losses NTC Sensor Durable
ColorBlack
FeaturesHigh power Low losses Easy install Durable design Versatile use Long lifespan
ManufacturerABB
MaterialPlastic Copper
MountingBaseplate
PackagingRetail Box
PS5441 Mitsubishi IGBT Module - Silicon RBSOA Package Rated Power with Fast Switching Over Current Limiting Durable
CurrentRated current
DimensionsModule size
FeaturesHigh Power Fast Switching Reliable Efficient Compact Durable Cost-effective
MaterialSilicon
PackageRbsoa
PowerRated power
Infineon IGBT Transistor - Silicon Carbide 60x40x10mm 600V 100A | High Power Fast Switching Low Losses Durable Design
Current100A
Dimensions60x40x10mm
FeaturesHigh Power Fast Switching Low Losses Durable Design Easy Assembly Reliable Operation Efficient Control
Junction Temp150°C
MaterialSilicon Carbide
MountingThrough-Hole
Infineon IGBT Module BSM400GA170DLC - White Module IGBT Type 90 Days Warranty | High Power Fast Switching Durable Design
BrandInfineon
ColorWhite
FeaturesHigh Power Fast Switching Reliable Operation Durable Design Efficient Performance
Model NumberBSM400GA170DLC
OriginGermany
PackageModule
IGBT Module - 600V Input 75A Output | Timer Function ROHS Compliant Compatible with UPS and AC Drive Applications
Price Trend: 1.00 - 50.00 INR/Piece
MOQ1 Piece/Pieces
Usageups
Input600v
Power Supplyigbt module
Output75a
Product TypeA50L-0001-0096/A evk71-060
Applicationvariable-frequency drives (VFDs) electric cars trains variable speed refrigerators lamp ballasts air-conditioners and even stereo systems with switching amplifiers.
Power Diode Module - Silicon 50A 1200V | High Power Fast Switching Reliable Performance Long Lifespan
BrandMitsubishi
Current50A
FeaturesHigh power Fast switching Reliable performance Long lifespan Easy installation Cost effective High efficiency
MaterialSilicon
ModelPM50RSE120
Voltage1200V
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