Bipolar Transistor In Wanchai
(29 products)
IGBT Power Transistor
MaterialSilicon
Dimensions70x50x30mm
Voltage1000V
Current100A
Power10kW
Weight0.5kg
FUJI RF Transistor - Semiconductor 5-14 GHz | High Power Low Voltage Rugged Short Circuit Withstand Over Current Limiting
MaterialSemiconductor
Frequency5-14 GHz
TerminalsThree
PowerHigh
CurrentHigh
VoltageLow
6MBP100RTA060-01 Industrial Transistor - Silicon 60x60x20 mm 100A 1000V | Low Saturation Voltage Over Current Limiting High Frequency Three-Terminal Module
MaterialSilicon
Dimensions60x60x20 mm
Voltage1000V
Current100A
Power10kW
MountingScrew
Transistor IGBTs SKD50/12 - Silicon 40x40x15 mm 50A 1200V Fast Switching Durable Performance
MaterialSilicon
Dimensions40x40x15 mm
Voltage1200V
Current50A
Power6kW
Operating temperature-40°C to +150°C
TOSHIBA IC Transistor MG30G6El2 - Silicon High Voltage High Power | Fast Switching Over Current Protection High Frequency Operation
MaterialSilicon
PackageTOSHIBA
PowerHigh
VoltageHigh
CurrentHigh
FrequencyHigh
FUJI IGBT Transistor 7MBP75JB-060 - Semiconductor Compact Size High Power | Fast Switching Low Voltage Over Current Limiting
MaterialSemiconductor
DimensionsModule size
VoltageRated voltage
CurrentRated current
Switching SpeedHigh frequency
PowerHigh Power
Fuji IGBT Transistor
Price: 35 USD ($)/Piece
MOQ5 Piece/Pieces
Power SourceAC/DC
FeaturesHigh Quality
InputAC/DC
Product Typeigbt transistors
ApplicationElectrical & Electronics
SizeStandard
Transistor IGBT Modules - Monolithic Half-Bridge Configuration Low Saturation Voltage Over Current Limiting Function High Frequency Operation
Product Descriptiontransistor IGBT modules
Infineon IGBT Transistor - Silicon Carbide 60x40x10mm 600V 100A | High Power Fast Switching Low Losses Durable Design
MaterialSilicon Carbide
Dimensions60x40x10mm
Voltage600V
Current100A
PackagingTO-247
MountingThrough-Hole
Fuji IGBT Transistor EVL31-050 - Silicon 70x50x20mm 1200V 50A | High Efficiency Fast Switching Durable Design
MaterialSilicon
Dimensions70x50x20mm
Voltage1200V
Current50A
Power6000W
MountingScrew
Integrated Gate Bipolar Transistors
MaterialSilicon
Voltage1700V
Current400A
PackageModule
ManufacturerInfineon
FeaturesSquare RBSOA Low voltage Over current limit High frequency Reliable operation Efficient switching Durable design
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IGBT Module - 600V 150A | 100% Original New Durable for Variable-Frequency Drives Electric Cars Air-Conditioners
Price Trend: 10.00 - 100.00 USD ($)/Piece
MOQ1 Piece/Pieces
Output900a
Power Supplyigbt module
Input1400v
Usageups
Product TypeCM900DU-24NF
Applicationvariable-frequency drives (VFDs) electric cars trains variable speed refrigerators lamp ballasts air-conditioners and even
Igbt Fuji Electric Transistor
MaterialSemiconductor
DimensionsModule size
Voltage600V
Current150A
ConfigurationHalf-bridge
DiodeFree wheel
Igbt Transistor Module Application: Variable-Frequency Drives (Vfds)
Price Trend: 1.00 - 50.00 USD ($)/Piece
MOQ1 Piece/Pieces
Power Supply600
Usageups switching
Input600v
Output150a
Product Type6DI120A-060
Applicationvariable-frequency drives (VFDs) electric cars trains variable speed refrigerators lamp ballasts air-conditioners and even
Transistors IGBT Modules - Model CM800HA-24H RoHS Compliant DIP/SMD Package | High Power Fast Switching Durable Design Reliable Performance
Model NumberCM800HA-24H
PackageDIP/SMD
TypeIGBT Module
BrandMitsubishi
OriginJapan
RoHSCompliant
Mitsubishi Darlington Transistor Module - 10x5x10 cm Black | IGBT Technology Low Saturation Voltage 150A Output UPS Switching Function
Price Trend: 1.00 - 50.00 USD ($)/Piece
MOQ1 Piece/Pieces
Usageups switching
Output150a
Power Supply600v
Input600v
Product TypeQM150DX-H
Applicationvariable-frequency drives (VFDs) electric cars trains variable speed refrigerators lamp ballasts air-conditioners and even
IGBT Power Transistor - Standard Size Matte Black | 1200V Input 50A Output 90 Days Warranty
Price Trend: 20.00 - 50.00 USD ($)/Piece
MOQ2 Piece/Pieces
UsageMACHINE POWER SUPPLY
Power Supply1200V
Output50A
Input1200V
Product Type6MBI50FA 060
Applicationpower supply machine
Fuji IGBT Transistors 7MBP75TEA120-50
Voltage1200V
Current75A
MaterialIGBT module
Package7MBP75TEA120-50
OriginJapan
FeaturesFast switching High efficiency Reliable operation Durable design Certified vendors
Electrical Diode Transistors Ic Chips Components
MaterialSemiconductor
DimensionsVariable
VoltageVariable
CurrentVariable
PowerVariable
TemperatureVariable
IGBTs Transistor
Price: 40 USD ($)/Piece
MOQ3 Piece/Pieces
Power SourceAC/DC
FeaturesHigh Quality
InputAC/DC
Product Typeigbt transistors
ApplicationElectrical & Electronics
SizeStandard
Transistor Modules MG75Q2YS1 - Silicon 50x50x20mm 1200V 75A | Low Saturation Voltage Over Current Protection Fast Switching
MaterialSilicon
Dimensions50x50x20mm
Weight100g
Voltage1200V
Current75A
Power9kW
Infineon IGBT Transistor - Black Press-Fit 1800A 1200V | High Power Fast Switching Reliable Performance
ColorBlack
Module TypeIGBT
Voltage1200V
Current1800A
Case StylePress-fit
FeaturesHigh power Fast switching Reliable performance Durable Efficient
Semikron Transistor Module SKIIP82AC12T1 - Silicon Carbide 100x50x20mm 1200V 82A | Fast Switching Compact Design Durable Bolt-on Mount
MaterialSilicon Carbide
Dimensions100x50x20mm
Voltage1200V
Current82A
Weight0.5kg
Mountingbolt-on
Semikron Transistor Module SKD14516 - Silicon Carbide 145x160x30mm 150A 1200V | High Power Fast Switching Compact Design Reliable Operation Easy Installation
MaterialSilicon Carbide
Dimensions145x160x30mm
Weight1.5kg
Voltage1200V
Current150A
OperatingTemp-40°C to 150°C
SEMIKRON IGBT Power Transistors - Silver 1200V High Frequency | Low Saturation Voltage Over Current Protection Fast Switching
Product TypePower Transistor
Dominant ColorSilver
TechnologyIGBT
Voltage Rating1200V
Current RatingRange
Switching FrequencyHigh
Driver Modules Transistor Power IGBT - Plastic Metal 70x50x20mm 1200V 100A Fast Switching Over Current Protection
Dimensions70x50x20mm
MaterialPlastic Metal
Voltage1200V
Current100A
Weight200g
MountingScrew
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