Igbt Modules In Taipei

Product DescriptionOur range of Thyristor (SCR) Module are available at following Features :- Isolation voltage 3500 V~ Industrial Standard Package High Surge Capability Glass Passivated Chips Simple Mounting Electrically Isolated by DBC Ceramic Thyristor (SCR) module 1600V : 40A 60A 90A 110A 130A 160A

Product DescriptionFollowing are the Main Features of Rectifier Diode and Bridge Module :- Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1200 V Low forward voltage drop UL registered E332185 Rectifier Diode module 1200V ~ 1800V : 90A 110A 130A 160A 180A 200

Product DescriptionOur range of Fred Module are available at following Features :- a c Ultrafast Recovery Time a c Soft Recovery Characteristics a c Low Recovery Loss a c Low Forward Voltage a c High Surge Current Capability a c Low Leakage Current Ultra Fast Diode Module 100V ~ 600V : 60A 100A 200A 300A 400A 600A 800

Product DescriptionFollowing are the Main Features of IGBT Module :- Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes Passivation: alpha-si and silicon nitride plus polyimide IGBT module 600-- 100A 200A 300A 400A 600A 1200V-- 25A