Size10-16"
Diameter250-400mm
Growth MethodCZ
Orientation<100>
TypeN/P-type
Purity11N
MaterialSilicon
ShapeIngot
Purity99.99%
DimensionsVariable
Crystal structureMono/Multi
Resistivity1-10 ohm-cm
Size3"/4"/5"/6"/8"
Growth MethodCZ
Diameter76.2-200mm
Orientation<111>/<100>
TypeN-type/P-type
DopantBoron/Phos./As./Sb.
Growth MethodCZ
Size12-16"
Diameter300-400mm
DopantBoron
Purity11N
Orientation<100><111>
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