Sic Schottky Barrier Diodes - Silicon Carbide, To-220/to-247/d2pak, Black Body Silver Leads, 600-1200v, 4a-20a, Ultrafast Switching, High Thermal Stability

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Product Specifications

Usage	Power conversion, power factor correction (PFC), inverters, SMPS, solar inverters
Output	Rectified DC
Power Supply	DC Input/Output
Interface	Through-hole or SMD
Features	Low leakage current, high surge capability, RoHS compliant, robust against high temperatures
Input	DC/AC
Operating Temperature	-55AdegC to +175AdegC
Thermal Conductivity	High; SiC material (~3-4 W/cmA*K)
Power Source	External DC/AC circuit
Response Time	Ultrafast reverse recovery (< 20 ns)
Components	SiC Schottky junction, encapsulated plastic case, metallic leads
Product Type	SiC Schottky Barrier Diode
Application	Industrial power supply, motor drives, power inverters, telecommunications, automotive ECU
Rated Voltage	600 V, 650 V, 1200 V (dependent on model)
Supply Voltage	Up to 1200 VDC
Size	Package sizes include TO-220, TO-247, DPAK, etc.
Dimension (LWH)	Depends on package; e.g., TO-220: 10.2A--4.5A--15.6 mm
Function	Current rectification, fast switching in power electronics
Color	Black body, silver leads
Weight	~1.2 g (SMD package); ~2 g (TO-220 package)
Thickness	0.3 mm - 0.6 mm (chip); package dependent
Current Rating	4 A to 20 A (model dependent)
Capacity	10 A, 15 A, 20 A (depends on model)
Frequency	High-frequency switching up to 500 kHz