Ngd8201n Transistor

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1. Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage
clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection,
or wherever high voltage and high current switching is required.
2. Features
> Ideal for Coil?on?Plug and Driver?on?Coil Applications
> DPAK Package Offers Smaller Footprint for Increased Board Space
> Gate?Emitter ESD Protection
> Temperature Compensated Gate?Collector Voltage Clamp Limits
Stress Applied to Load
> Integrated ESD Diode Protection
> Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
> Low Saturation Voltage
> High Pulsed Current Capability
> Optional Gate Resistor (RG) and Gate?Emitter Resistor (RGE)