Flash Memory Chips

We are offering our customers a wide range of Flash Memory Chips, which are available following Specifications :-
a c Voltage Supply : 2.7 ~ 3.6 V
a c Organization
- Memory Cell Array
-(16M + 512K)bit x 8bit
- Data Register
- (512 + 16)bit x 8bit
a c Automatic Program and Erase
- Page Program
-(512 + 16)Byte
- Block Erase :
- (16K + 512)Byte
a c Page Read Operation
- Page Size
- (512 + 16)Byte
- Random Access : 10s(Max.)
- Serial Page Access : 50ns(Min.)
a c Fast Write Cycle Time
- Program time : 200Aus(Typ.)
- Block Erase Time : 2ms(Typ.)
a c Command/Address/Data Multiplexed I/O Port
a c Hardware Data Protection
- Program/Erase Lockout During Power Transitions
a c Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
a c Command Register Operation
a c Unique ID for Copyright Protection
a c Package
- K9F2808U0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2808U0C-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free package
- K9F2808U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F2808U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F2808U0C-V/F(WSOPI ) is the same device as
K9F2808U0C-Y/P(TSOP1) except package type.