Dbc Substrate

Direct bonded copper (DBC) substrates consist of a ceramic isolator, Al2O3 (aluminium oxide) or AlN (aluminium nitride), to which pure copper is applied in a high temperature melting and diffusion process. The result is a non-detachable connection of copper and ceramics.

Due to the high heat conductivity of Al2O3 (24 W/mK) and AlN (130 to 180 W/mK) and the excellent heat capacity of the thick copper coating (200 - 600 I m) DBC substrates are ideally suited for high power electronics. The temperature coefficient of expansion (TCE) of Al2O3 and AlN closely matches that of silicon. This minimizes the mechanical stress in the bare silicon die which is attached to the substrate since the TCE of DBC Al2O3 and AlN are much closer to that of silicon than other materials.

Advantages:
// Extraordinary heat dissipating capability and temperature resistance
// High isolation voltage
// Excellent heat spreading
// Adjusted expansion coefficient enables chip on board
// Efficient chip soldering and wire bonding directly on the master card