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Polysilicon Ingot In Jiaozuo
(7 products)
Solar Grade Polysilicon
Purity6N (99.9999%)
Resistivity>20 ohm-cm
TypeP/N type
TechniqueImproved Siemens
Capacity1000Mt/year
FormChunks
Polysilicon Ingot Furnace
MaterialSteel
DimensionsVaried
PowerHigh
TemperatureHigh
ControlPrecise
EfficiencyHigh
Beijing Sevenstar Electronics Co., Ltd.
Beijing
Multi-Crystalline Ingot Grower
capacity1800kg-2000kg
crucible450kg/500kg
ingot_growthFour ingots
patentsTens
technologyProPower
applicationMulti-crystalline
Shanghai Propower Renewable Energy Co.,ltd.
Shanghai
Solar Grade Silicon Ingot
MaterialSilicon
ShapeIngot
Purity99.99%
DimensionsVariable
Crystal structureMono/Multi
Resistivity1-10 ohm-cm
Large Diameter Silicon Ingot
Growth MethodCZ
Size12-16"
Diameter300-400mm
DopantBoron
Purity11N
Orientation<100><111>
Large Diameter Silicon Ingots
Size10-16"
Diameter250-400mm
Growth MethodCZ
Orientation<100>
TypeN/P-type
Purity11N
IC Grade Silicon Ingot
Size3"/4"/5"/6"/8"
Growth MethodCZ
Diameter76.2-200mm
Orientation<111>/<100>
TypeN-type/P-type
DopantBoron/Phos./As./Sb.
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