High Voltage Transistor In Guilin
(62 products)
MMBTA44 High Voltage Transistor
MaterialSilicon
Dimensions5x3x2mm
Power1W
Voltage400V
Current1A
PackageSOT23
Bcp53-16 Sot-223-3 Transistor - Application: Industrial
MOQ100 Piece/Pieces
FeaturesPremium Quality
ApplicationIndustrial
Rated Voltage1 To 5 Volt (V)
SizeDifferent Available
FunctionElectrical
ColorAs Per Availability
Shenzhen Dasonghe Trading Co. Ltd.
Shenzhen
Trusted Seller1 Years
High Frequency Transistor
MaterialSilicon
FrequencyHigh
PowerHigh
PackagingAir sealed
MountingSurface mount
Case StyleSOT-23
Voltage Transistors
PackageTO-3P
MaterialSilicon
Voltage50V
Current8A
Power10W
FeaturesHigh voltage Reliable performance Long lifespan Cost effective Easy installation Compact design Wide applications
Shenzhen Chuxing Electronics Co. Ltd.
Shenzhen
High Temp Transistor Application: Electronics
Product TypeHigh Temp Transistor
ApplicationElectronics
SizeVarious sizses are available
ColorVarious colors are available
Low Voltage High Power Stator Lamination
MaterialSilicon steel
Outer Diameter100-300 mm
Inner Diameter50-200 mm
Thickness0.5-2 mm
CoatingInsulating
Tolerance±0.05 mm
Henan Yongrong Power Technology Co. Ltd
Xuchang
S9018 High Frequency Transistor
Package TypeSurface Mount
MaterialSemiconductor
FrequencyHigh
ModelGMSE
BrandGM9018
Quantity3000
S9014 Transistors
MaterialSilicon
DimensionsSOT-23
Power0.5W
Voltage30V
Current100mA
Frequency300MHz
BC817-40 SOT-23 Transistor
PackageSOT-23
MaterialSilicon
Dimensions2.9x1.6mm
Current100mA
Voltage40V
Power0.5W
BC848B Transistor with SOT-23 Package
MaterialSilicon
PackageSOT-23
Dimensions2.9x1.6 mm
Leads3
Current100mA
Voltage40V
SS8050 SMD Transistor with SOT-23 Package
Product DescriptionWe are offering our clients a wide range of SS8050 SMD Transistor with SOT-23 Package which are available following Specifications :- Brand Name GSME Model Number SS8050 Type Bipolar Junction Transistor Package Type Surface Mount plate Blue These SS8050 SMD Transistor with SOT-23 Package are availa
S1815 SMD Transistor With SOT-23 Package
MaterialSilicon
PackageSOT-23
Dimensions2.9x1.6mm
Current100mA
Voltage30V
Power0.25W
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S9012 SOT-23 General Transistors
PackageSOT-23
MaterialSilica
Dimensions3x1.6mm
Leads3
Current100mA
Voltage40V
Bcx56-16 Sot-89 Transistor - Application: Industrial
MOQ100 Piece/Pieces
FeaturesPremium Quality
Power SourceElectric
ApplicationIndustrial
Rated VoltageUpto 5 Volt (V)
SizeDifferent Available
FunctionElectrical
Ht7550-1 Sot-89 Low Power Consumption Ldo Three-Terminal Voltage Regulator Chip - Application: Industrial
MOQ100 Piece/Pieces
Power SourceElectric
FeaturesPremium Quality
ApplicationIndustrial
SizeDifferent Available
FunctionElectrical
ColorAs Per Availability
Bsr16 Sot-23-3 Transistor - Application: Industrial
MOQ100 Piece/Pieces
FeaturesPremium Quality
ApplicationIndustrial
Rated Voltage1 To 5 Volt (V)
SizeDifferent Available
FunctionElectrical
ColorAs Per Availability
Bcp56-16 Sot-223-3 Transistor - Application: Industrial
MOQ100 Piece/Pieces
FeaturesPremium Quality
ApplicationIndustrial
Rated Voltage1 To 5 Volt (V)
SizeDifferent Available
FunctionElectrical
ColorAs Per Availability
Transistor IGBT Module
MaterialSemiconductor
DimensionsModule Size
VoltageInput Voltage
CurrentOutput Current
WeightModule Weight
PackagingStandard Packaging
Transistor IGBT Tube Inline
MaterialSilicon
Dimensions10x10x5mm
Voltage600V
Current100A
Power600W
Leads3
Bluetooth Module - Carbide Tungsten 20mm x 15mm | 3.3V Operating Voltage 4dBm Transmit Power 1Mbps Data Rate Integrated Antenna
MaterialCarbide Tungsten
InterfaceController
AntennaIntegrated
ConnectorEdge
PowerHigh transmit
ModulationBluetooth SPF
MOSFET Transistor
MaterialSilicon
Dimensions10x5x3mm
Power rating50W
Operating voltage60V
Operating temperature150°C
PackagingSurface mount
Power Transistor
MaterialSilicon
DimensionsTO-3P
Voltage50V
Current10A
Power50W
PackageTO-3
Bipolar Darlington Transistor
MaterialMetal
PackageSurface Mount
Dimensions5mm x 5mm
Current Gain10000
Voltage50V
Power0.5W
IGBT Chip Transistor Module
MaterialSilicon
Dimensions10x10mm
Voltage600V
Current100A
Power10kW
Switching speed1us
N-CH 500V 24A 3-Pin MOSFET Transistor
Voltage500V
Current24A
Pins3-Pin
MaterialSilicon
PackageTO-220
FeaturesHigh voltage High current Fast switching Reliable operation Compact size Easy to use Cost effective
Infrared Temperature Sensor - Ceramic Metal | 5x5x3 mm Accuracy: ±0.5°C Response Time: 10ms Flexible Design High Sensitivity Heat Resistant
MaterialMetal Ceramic
Dimensions5x5x3 mm
Wavelength8-14µm
Sensitivity0.1°C
Accuracy±0.5°C
Response time10ms
Customized High Frequency High Voltage Silicon Stacks
Repetitive peak reverse voltage10~30KV
Avg. forward rectified current40A
Peak forward surge current800A
Peak forward voltage Max.60~400V
Max. reverse current10A
Reverse recovery time500nS
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