We are offering our customers a wide range of Evaporation System for Continuous Al Deposition (Roll Evaporator-1000), which are available following Specifications :- Loading capacity : 5km per day Average throughput : 15,000km per year Dimension : 1,730L  1,200H  1,000W (mm3) Power : AC(1A, -10kV) f

Following are the Main Features of PECVD System for OLED Barrier Layers (EL-PECVD Lab-100) :- SiOx and SiNx rf-PECVD system for R&D and small scale production. Designed to be compatible with OLED cluster system. Transformer-coupled high density plasma source. System and process controlled automatica

We are offering our customers a wide range of Arc Discharge System for Transparent Electrode (ArcLab-200), which are available following Specifications :- Carbon rod : ~12 x 300mm Average throughput : Up to 10kg per year Dimension : 1000L x 1400H x 650W(mm3) Power : DC 2kW Gas : He/H2/Ar Pump : rota

We are offering our customers a wide range of PECVD System for Low Temp. CNTs Synthesis (PECVD Lab-100-N), which are available following Specifications :- Heating range : 400 ~ 600C Average throughput : Up to 5,000 wafers per year Wafer capacity : 1  4" Dimension : 1,100L  1,500H  900W (mm3) Power :

Our range of PECVD System for Solar Cell AR Coatings (PECVD Lab-300) are available at following Features :- Capacitively-Coupled PECVD system with loadlock chamber for R&D and small scale production. Automatic loadlock system with cassette. Uniform gas distribution through shower head. Specification

Following are the Main Features of PECVD System with High Density Plasma (PECVD Lab-1000) :- SiO2 PECVD system for R&D and small scale production. Excellent thickness and reflective index uniformity in deposited layer (avg. 7m). Highly smooth surface(RMS roughness of deposited layer : 30.6). Transfo

Following are the Main Features of Arc Discharge System for SWCNTs Production (ArcPilot-200) :- Arc discharge synthesis of high quality SWCNTs. Automatically controlled sequential process of electrode loading, discharge, CNTs synthesis and their recovery. Equipped with specially designed CNTs recove

Following are the Main Features of ICP CVD System for Graphene and Boron Carbide Layers (PECVD Lab 200) :- Multi-functional CVD system combined with ICP CVD and probe station. Maximum substrate temperature: 1,000C. Automatic loading available during susceptor heating. High density plasma source. PC-

We are offering our customers a wide range of High Density Plasma Etching System for Waveguides (Cluster Etch-300), which are available following Specifications :- Wafer capacity : 1  6" Dimension : 1,810L  1,800H  1,222W (mm3) Power : AC 3kW for TCP source(13.56MHz) AC 600W for bias voltage(13.56MH

We are instrumental in trading a qualitative range of Industrial Automation including Evaporation System for Continuous Al Deposition (Roll Evaporator-1000), PECVD System for OLED Barrier Layers (EL-PECVD Lab-100), Arc Discharge System For Transparent Electrode (Arclab-200) etc.

A-Tech System - Manufacturer of Industrial Automation, Arc Discharge System For Transparent Electrode (Arclab-200), ICP CVD System for Graphene and Boron Carbide Layers (PECVD Lab 200) from Incheon, Incheon, Korea South.

A-Tech System - Industrial Automation (9)

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Evaporation System for Continuous Al Deposition (Roll Evaporator-1000)

PECVD System for OLED Barrier Layers (EL-PECVD Lab-100)

Arc Discharge System For Transparent Electrode (Arclab-200)

PECVD System for Low Temp. CNTs Synthesis (PECVD Lab-100-N)

PECVD System for Solar Cell AR Coatings (PECVD Lab-300)

PECVD System with High Density Plasma (PECVD Lab-1000)

Arc Discharge System for SWCNTs Production (ArcPilot-200)

ICP CVD System for Graphene and Boron Carbide Layers (PECVD Lab 200)

High Density Plasma Etching System for Waveguides (Cluster Etch-300)