Shengda Mining - Products & Services

China Supplier 2 4 6 8 Inch Fz Cz Silicon Wafers For Power Semiconductor Devices

FZ CZ Silicon Wafer of 3inch 4inch 5inch 6inch 8 inch NTD N P EPI type

Single Crystal Silicon Wafer P-N Type 2 Inch (Dia) Application: Industrial

Quartz Substrate - High-Quality Transparent Material | Precision Composition, Optimal Chemical Processing, Versatile Packaging Options

Silicon Wafers ( Doped And Undoped) Hardness: No

Silicon Wafer 6 inch (P Type, Boron Doped)

SILICON WAFER SILICON DIOXIDE LAYER

Germanium Wafers - Silver, Hardness Properties | Premium Quality Semiconductor Material

SAPPHIRE WAFERS

Silicon Wafer - Undoped, 4-Inch Diameter (100 mm), 500 µm Thickness, <100> Crystal Orientation, Single/Both Side Polished, 12.5-16.5 ppm Oxygen Content

SILICON WAFER UNDOPED - Crystal Orientation <100>, Thickness 500 m, Resistivity 1-10 ohm-cm, 12% Oxygen Content | Single/Both Side Polished, Customizable Options

Industrial SILICON GERMANIUM WAFERS

Silicon Wafer - 6 Inch Diameter (152.4 mm), Boron Doped, <100> Crystal Orientation, 250-500 um Thickness, Oxygen Contents (ppm) 12.5-16.5, Carbon Contents (ppm) <1

BORON DOPED SILICON WAFER

Sapphire Wafer C Plane (Al2O3)

Phosphorus Doped Silicon Wafer - 4 Inch Diameter, N-Type Doping, Single/Both Side Polished | Customizable Resistivity 1-10 Ohm-cm, CZ Method, <100> Orientation

SILICON CARBIDE WAFERS

Silver N Doped Silicon Wafer (4 Inch N Type Phosphorus Doped)

Platinum and Gold Coated Silicon Wafer - Enhanced Hardness | Superior Durability and Performance

Microcrystalline Cellulose Wafer