Shengda Mining

China Supplier 2 4 6 8 Inch Fz Cz Silicon Wafers For Power Semiconductor Devices

Black Silicon Wafer 3"

GERMANIUM WAFER

FZ CZ Silicon Wafer of 3inch 4inch 5inch 6inch 8 inch NTD N P EPI type

Boron Doped Silicon Wafer - 275um Thickness, Black Color, P-Type Doping | Nanoshel Grade, 6-Month Warranty, <100> Orientation, CZ Growth Method

Silver N Doped Silicon Wafer (4 Inch N Type Phosphorus Doped)

BORON DOPED SILICON WAFER

Industrial SILICON GERMANIUM WAFERS

FZ NTD Single Crystal Silicon Wafer - 2" 3" 4" 5" 6", N/P Type, <100> <111> Orientation, 15-600 Ohm.cm Resistivity | Thermoelectric, Optoelectronic, Microelectronic, Photovoltaic Applications

Single Crystal Silicon Wafer P-N Type 2 Inch (Dia) Application: Industrial

Polysilicon Ingot - Solar Ingot Chunk, High Strength & Corrosion Resistance for Enhanced Durability

Silicon Germanium Wafers

Customized Industrial Silicon Wafer Application: Solar Cell

320 MM Aqua Star Maxximo Runner Drop - Crafted for Efficient Gas Passage, Mould Filling Gauge & Optimal Shrinkage Control | Durable Design for Enhanced Metal Flow

Silicon Wafer - P Type, 3-Inch Diameter, Rounded Edge Profile, Boron Doping, Polished Front Side, Etched Back Side | Grade: Nanoshel, 6-Month Warranty

Silicon Wafer - N Type Phosphorous Doped, Polished Front Surface, Rounded Edge Profile | Grade Nanoshel, Warranty 6 Months

Doped Silicon Wafer

Silicon Wafer - 6 Inch Diameter (152.4 mm), Boron Doped, <100> Crystal Orientation, 250-500 um Thickness, Oxygen Contents (ppm) 12.5-16.5, Carbon Contents (ppm) <1

Polysilicon Ingot - Solar and IC Grade, 6N-11N Purity, 160 mm Diameter | High-Quality P-Type, Customized Specifications Available

Silicon Wafer - N Type, Phosphorous Doped, Etched Backside Surface, Rounded Edge Profile | Grade: Nanoshel, 6-Month Warranty