Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 75V
FET Feature: Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Established in 1985, E-CHIPS SOLUTION CO., LTD. has been a leading name in offering top notch Semiconductors. Located in Shenzhen, Guangdong, we offer the best quality MOSFET FDS86242 Semiconductor to our customers at best prices in the industry.
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