Quartz N. Crystal

Phosphorus Doped Silicon Wafer - 4 Inch Diameter, N-Type Doping, Single/Both Side Polished | Customizable Resistivity 1-10 Ohm-cm, CZ Method, <100> Orientation

SAPPHIRE WAFERS

Sapphire Wafer C Plane (Al2O3)

Germanium Wafers - Silver, Hardness Properties | Premium Quality Semiconductor Material

Microcrystalline Cellulose Wafer - Hard, Durable Texture | Ideal for Various Applications

Silicon Wafer - 6 Inch Diameter (152.4 mm), Boron Doped, <100> Crystal Orientation, 250-500 um Thickness, Oxygen Contents (ppm) 12.5-16.5, Carbon Contents (ppm) <1

Silicon Wafer 6 inch (P Type, Boron Doped)

Quartz Substrate - High-Quality Transparent Material | Precision Composition, Optimal Chemical Processing, Versatile Packaging Options

Silver N Doped Silicon Wafer (4 Inch N Type Phosphorus Doped)

Industrial SILICON GERMANIUM WAFERS

Silicon Wafers ( Doped And Undoped) Hardness: No

Microcrystalline Cellulose Wafer

SILICON CARBIDE WAFERS

Silicon Wafer - Undoped, 4-Inch Diameter (100 mm), 500 µm Thickness, <100> Crystal Orientation, Single/Both Side Polished, 12.5-16.5 ppm Oxygen Content

Piezo Single Crystal Quartz Wafer

Silicon Germanium Wafers

SILICON WAFER SILICON DIOXIDE LAYER