Pro Materials Ltd.

Silicon Wafer - 6 Inch Diameter (152.4 mm), Boron Doped, <100> Crystal Orientation, 250-500 um Thickness, Oxygen Contents (ppm) 12.5-16.5, Carbon Contents (ppm) <1

BORON DOPED SILICON WAFER

Industrial SILICON GERMANIUM WAFERS

SILICON WAFER SILICON DIOXIDE LAYER

Phosphorus Doped Silicon Wafer - 4 Inch Diameter, N-Type Doping, Single/Both Side Polished | Customizable Resistivity 1-10 Ohm-cm, CZ Method, <100> Orientation

SILICON WAFER UNDOPED - Crystal Orientation <100>, Thickness 500 m, Resistivity 1-10 ohm-cm, 12% Oxygen Content | Single/Both Side Polished, Customizable Options

SILICON CARBIDE WAFERS

GERMANIUM WAFER